Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters Through Emitter Stray Inductance in High-Power IGBT Modules

Abstract

This paper proposes the adoption of the inherent emitter stray inductance LeE in high-power insulated gate bipolar transistor (IGBT) modules as a new dynamic thermo-sensitive electrical parameter (d-TSEP). Furthermore, a family of 14 derived dynamic TSEP candidates has been extracted and classified in voltage-based, time-based and charge-based TSEPs. Accordingly, the perspectives and the implementation challenges of the proposed method are discussed and summarized. Finally, high-power test platforms are designed and adopted to experimentally verify the theoretical analysis. Index Terms-High-power IGBT modules, auxiliary parasitic inductance, dynamic thermo-sensitive electrical parameters, junction temperature extraction principles. I. INTRODUCTION HE fast-growing pace of high-power conversion systems keep developing high-power Insulated Gate Bipolar Transistors (IGBTs) [1,2]. Thermal performance is currently regarded as one of the most important specifications in high-power modules, since both the short-term characteristics [3] and long-term ones are temperature-dependent [4,5]. In terms of the maximum operating junction temperature Tj, the commercially-available silicon-based power devices are rated up to 175 °C and the expected operation Tj in Wide-Band-Gap devices can reach 300 °C [6]. Hence, the knowledge of Tj has a crucial effect on the safe operation area of IGBTs. So far, many practical methods have been proposed [7-10]. Generally, the widely-studied Tj estimation methods in

A Model of the On-State Voltage across IGBT Modules Based on Physical Structure and Conduction Mechanisms

“…IGBT module can be regarded as a switch in power electronics systems. Both transient characteristics [16,17] and steady characteristics have been researched. The on-state voltage, denoted as the voltage between the collector and the emitter in steady state [18,19] is the main parameter of the steady state characteristic and is important to the IGBT module.…”

“…In engineering applications, which are restricted by manufacturing technology and operating conditions, IGBT modules are often insufficiently cooled, causing the junction temperature far higher than the operating temperature [20]. The influences of conditions for high junction temperature have been analyzed [16,21]. Such high junction temperatures increase the probability for failure of the IGBT 2 of 15 module.…”

Challenges and Strategies for a Real-Time Implementation of a Rainflow-Counting Algorithm for Fatigue Assessment of Power Modules

“…One way to acquire information about the condition of a power device is through the well-known device-lifetime indicators, i.e., the conducting voltage, and the thermal resistance of the module [3]. Methods to measure these quantities are available in literature [4], [5], but face obstacles, especially when they are implemented online, such as lack of accuracy, or need for recalibration with device ageing. An alternative indicator is to look into the historical temperature profile that the semiconductor surfaces have been exposed to, assuming that the mechanical stresses in the packaging structure are a function of the junction-temperature variation.…”

“…Ongoing research activities show that the temperature profile can be acquired either by direct measurements (using temperature sensors embedded in the module), or via indirect methods. Indirect approaches may include sensing of temperature-sensitive electrical parameters (TSEPs) [5], but can also be based on estimations using an accurate thermal model of the device in combination with the actual device losses, which are the main source of heat on the chip. Studying these methods falls outside the scope of this work; in this paper it is assumed that a reliable estimation of the temperature profile is available, and is generated simultaneously to the operation of the power converter.…”

Extraction of Junction Temperature of SiC MOSFET Module Based on Turn-On dIDS/dt

“…Since this voltage is not well defined, a quasi-threshold voltage (gate voltage of drain current reaching 10% of rated current) can only be obtained by detecting the value of the drain current. Reference [16] uses the turn-off delay of IGBT to measure the junction temperature, but SiC MOSFET is a unipolar switching device and does not include any extracting minority carriers during the turned off transient. Therefore, the junction temperature cannot be measured using the temperature sensitivity of the minority carrier during the turn off transient.…”