Semiconductor tubes, rods and rings of nanometer and micrometer dimension

Controlled Assembly and Dispersion of Strain-Induced InGaAs/GaAs Nanotubes

“…3. The tubes are well aligned to the lithographically defined rectangular mesa patterns, due to the crystal orientation dependence and geometry effect [5], [15]- [18]. The dimensions are 50 µm in length and ∼590 nm in diameter, with an aspect ratio of ∼85.…”

Geometrical and electro-magnetic field effects on the hydrogenic donor impurity energy structure in a non-uniform quantum ribbon

“…From the solid line curve, we can recognize an oscillatory behavior of the ground state energy with the magnetic field strength whose period is equal to and independent of the donor impurity presence. This behavior usually called A-B effect and it is a result of the strong competition between the paramagnetic (~ γ) and diamagnetic (~ γ 2 ) terms present in the one-dimensional Schrödinger equation (2). The maximum value of the ground state energy is given by .…”

“…Novel growth techniques based on self-rolling up semiconductor layers [1] and lift-off procedures [2] have made possible to obtain GaAs/AlGaAs cylindrical quantum ribbons (QRb). These quasi-two dimensional structures present fascinating structural properties which makes them exceptional candidates to realize basic and applied physics [3].…”

Driving microfluidic flows with three dimensional electrodes.

“…This technique utilizes the strain mismatch between two layered sheets of materials. This principle has been used to produce coiled cantilevers and tubes with internal radii down to 2nm by using bilayers of epitaxially grown semiconductor films ( [12], [74], [75]and [76]). …”

“…been used as mirrors ( [12], [79]), stages [13], shutters [14] and cantilevers to act as field emitters [16]. Figure 4.6 shows an SEM image of nanopipelines to handle fluids [76].…”