Semiconductor Thermal Neutron Detector

Abstract

The CdTe and GaN detector with a Gd converter have been developed and investigated as a neutron detector for neutron imaging. The fabricated Gd/CdTe detector with the 25 mm thick Gd was designed on the basis of simulation results of thermal neutron detection efficiency and spatial resolution. The Gd/CdTe detector shows the detection of neutron capture gamma ray emission in the 155 Gd(n, g) 156 Gd, 157 Gd(n, g) 158 Gd and 113 Cd(n, g) 114 Cd reactions and characteristic X-ray emissions due to conversion-electrons generated inside the Gd film. The observed efficient thermal neutron detection with the Gd/CdTe detector shows its promise in neutron radiography application. Moreover, a BGaN detector has also investigated to separate neutron signal from gamma-ray clearly. AbstrakDetektor Neutron Termal Semikonduktor. Detektor CdTe dan GaN dengan konverter Gd telah dikembangkan dan diteliti sebagai detektor neutron yang digunakan dalam pencitraan neutron. Detektor Gd/CdTe yang dibuat dengan Gd setebal 25 mm itu dirancang berdasarkan hasil simulasi efisiensi pendeteksian dan resolusi spasial neutron termal. Detektor Gd/CdTe menunjukkan adanya pendeteksian neutron yang menangkap emisi sinar gamma dalam reaksi-reaksi 155 Gd(n, g) 156 Gd, 157 Gd(n, g) 158 Gd, dan 113 Cd(n, g) 114 Cd dan emisi sinar-X yang khas sebagai akibat dari dihasilkannya elektron-elektron konversi dalam film Gd. Dalam aplikasi radiografi neutron, pendeteksian dengan detektor Gd/CdTe yang efisien terhadap neutron termal yang diteliti merupakan temuan yang menjanjikan. Selain itu, diselidiki juga bahwa detektor BGaN dapat memisahkan sinyal neutron dan sinar gamma dengan jelas.

Impact of growth temperature on the structural properties of BGaN films grown by metal-organic vapor phase epitaxy using trimethylboron

“…24,25) However, boron has very attractive properties which are not found in other group-III atoms, mainly its large neutron capture cross section, opening up a new field of application as absorber material for neutron detectors. 26,27) We have been proposing and developing BGaN growth and it application as neutron detectors previously. [26][27][28] In order to improve the performance of the neutron semiconductor detector, it is indispensable to improve the crystal quality.…”

“…26,27) We have been proposing and developing BGaN growth and it application as neutron detectors previously. [26][27][28] In order to improve the performance of the neutron semiconductor detector, it is indispensable to improve the crystal quality. Additionally, it is required to increase the amount of B in the film to improve the neutron detection efficiency.…”