Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005.
DOI: 10.1109/ipfa.2005.1469161
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Semiconductor pn junction failure at operation near or in the breakdown region of the reverse I-V characteristic

V.V.N. Obreja
1
,
C. Codreanu
2
,
Daniel Puiu Poenar3
et al.
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Experimental Investigation on the Leakage Reverse Current Component Flowing at the Semiconductor PN Junction Periphery

Obreja
1
,
Codreanu
2
7th. Int. Conf. On Thermal, Mechanical and Multiphysics Simulation and Experiments in Micro-Electronics and Micro-Systems
2
0
0
0
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Experimental Investigation on the Leakage Reverse Current Component Flowing at the Semiconductor PN Junction Periphery

Obreja
1
,
Codreanu
2
7th. Int. Conf. On Thermal, Mechanical and Multiphysics Simulation and Experiments in Micro-Electronics and Micro-Systems
2
0
0
0
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On the Maximum Permissible Working Voltage of Commercial Power Silicon Diodes and Thyristors

Obreja
1
2007
2007 IEEE International Symposium on Industrial Electronics
2
0
2
0
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The junction edge leakage current and the blocking I-V characteristics of commercial glass passivated thyristor devices

Obreja
1
,
Manea
2
,
Codreanu
3
et al.
CAS 2005 Proceedings. 2005 International Semiconductor Conference, 2005.
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