Semiconductor Nanowires: From Self‐Organization to Patterned Growth

Fan, Hong Jin; Werner, P.; Zacharias, Margit

doi:10.1002/smll.200500495

Cited by 746 publications

(613 citation statements)

References 131 publications

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“…8,9 The most widely reported mechanism for NW assembly is the so called vapor-liquid-solid ͑VLS͒ mechanism. [10][11][12] During VLS growth, gas-phase adatoms impinge on, or diffuse toward, liquid-phase metal nanoparticles ͓typically Au, but also Ga ͑Ref. 13͒ and Cu ͑Ref.…”

Section: Introductionmentioning

confidence: 99%

Structural and optical analysis of GaAsP/GaP core-shell nanowires

Mohseni

Rodrigues

Galzerani

et al. 2009

Journal of Applied Physics

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Influence of cross-section geometry and wire orientation on the phonon shifts in ultra-scaled Si nanowires J. Appl. Phys. 110, 094308 (2011) Study on the structural and physical properties of ZnO nanowire arrays grown via electrochemical and hydrothermal depositions J. Appl. Phys. 110, 094310 (2011) Growth of single-crystalline cobalt silicide nanowires with excellent physical properties J. Appl. Phys. 110, 074302 (2011) General hypothesis for nanowire synthesis. I. Extended principles and evidential (experimental and theoretical) demonstration J. Appl. Phys. 110, 054311 (2011) Thermoelectric properties for single crystal bismuth nanowires using a mean free path limitation model J. Appl. Phys. 110, 053702 (2011) Additional information on J. Appl. Phys. The structural and optical properties of GaAsP/GaP core-shell nanowires grown by gas source molecular beam epitaxy were investigated by transmission electron microscopy, Raman spectroscopy, photoluminescence ͑PL͒, and magneto-PL. The effects of surface depletion and compositional variations in the ternary alloy manifested as a redshift in GaAsP PL upon surface passivation, and a decrease in redshift in PL in the presence of a magnetic field due to spatial confinement of carriers.

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Section: Introductionmentioning

confidence: 99%

Structural and optical analysis of GaAsP/GaP core-shell nanowires

Mohseni

Rodrigues

Galzerani

et al. 2009

Journal of Applied Physics

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“…[1][2][3][4][5] Along with group IV and III-V materials, metal oxide (including In 2 O 3 , SnO 2 and ZnO) nanowires have been widely studied due to their excellent electrical and optical properties and ease of fabrication. [6][7][8] In these studies the metal oxide nanowires are typically not intentionally doped, and the carriers are normally generated by structural defects such as oxygen deficiencies.…”

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confidence: 99%

High-Performance Transparent Conducting Oxide Nanowires

et al. 2006

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We report the growth and characterization of single-crystalline Sn-doped In 2 O 3 (ITO) and Mo-doped In 2 O 3 (IMO) nanowires. Epitaxial growth of vertically aligned ITO nanowire arrays was achieved on ITO/yttria-stabilized zirconia (YSZ) substrates. Optical transmittance and electrical transport measurements show that these nanowires are high-performance transparent metallic conductors with transmittance of ∼85% in the visible range, resistivities as low as 6.29 × 10 -5 Ω·cm and failure-current densities as high as 3.1 × 10 7 A/cm 2 . Such nanowires will be suitable in a wide range of applications including organic light-emitting devices, solar cells, and field emitters. In addition, we demonstrate the growth of branched nanowire structures in which semiconducting In 2 O 3 nanowire arrays with variable densities were grown epitaxially on metallic ITO nanowire backbones.One-dimensional (1D) nanostructures such as nanowires, nanorods, and nanobelts have become the focus of intensive investigation in the past decade as potential building blocks for nanoscale devices and sensors. 1-5 Along with group IV and III-V materials, metal oxide (including In 2 O 3 , SnO 2 and ZnO) nanowires have been widely studied due to their excellent electrical and optical properties and ease of fabrication. [6][7][8] In these studies the metal oxide nanowires are typically not intentionally doped, and the carriers are normally generated by structural defects such as oxygen deficiencies. As a result, the devices behave as wide band gap semiconductors whose performance is influenced by the surrounding environment. 8 On the other hand, intentional doping can greatly modify the device properties and yield new device applications. One such example is tin-doped indium oxide (ITO), in which metal-like behavior is achieved when In 2 O 3 is degenerately doped by Sn. Due to its high conductivity and high transmittance in the visible spectral region, 9 ITO has become by far the most important transparent conducting oxide material, and ITO films have found applications in various optoelectronic devices such as flatpanel displays, solar cells, and light-emitting diodes. [10][11][12] The ability to obtain highly transparent and highly conducting ITO nanowires may potentially further enhance the performance of such devices due to the increased effective device area using nanowire electrodes. Furthermore, similar to NiSi and TaSi 2 nanowires, 13,14 the highly conducting ITO nanowires may also be used as interconnects in integrated nanocsale devices.The growth of ITO nanowires/nanorods has been reported by several groups since the first study on In 2 O 3 nanobelts in 2001. [15][16][17][18][19][20][21] However, detailed electrical characterizations have not been reported, and it is not clear whether these ITO nanowire/nanorods have the desired electrical properties. For example, the only reported resistivity value is ∼0.4 Ω‚cm, 18 which is several orders higher than that can be obtained in commercially available ITO films 9 and clearly too high ...

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“…Such systems can now be manipulated at a molecular level and engineered to a desired specification using patterned substrates as templates [1][2][3][7][8][9][10]. As a result, there is a growing theoretical appreciation for subtle phenomena activated or suppressed by thermal fluctuations in individual systems: e.g.…”

Section: Introductionmentioning

confidence: 99%

“…In particular, deposition on patterned substrates [2,3,7,8] could provide a method to fabricate large networks of nano-wires in arbitrary combinations, and therefore to deposit nano-circuitry. These methods imply horizontal growth into patterned nano-channels obtained by strain-controlled cracking of the substrate [7,8], or other means [3].…”

Section: Introductionmentioning

confidence: 99%

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Quasi-one-dimensional thermal breakage

et al. 2013

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Breakage is generally understood in mechanical terms, yet nano-structures can rupture not only under external loads but also via thermal activation. Here we treat in a general framework the statistical mechanics of thermally induced breakage at the nano-scale for one-dimensional systems. We test it on a simple approximation and find that the probability of breakage controls distinct regimes, characterized by sharp crossovers and narrow peaks in the thermal fluctuations and specific heat. Our work provides predictions on clustering of new phases, of relevance in nano-fabrication.

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Semiconductor Nanowires: From Self‐Organization to Patterned Growth

Cited by 746 publications

References 131 publications

Structural and optical analysis of GaAsP/GaP core-shell nanowires

Structural and optical analysis of GaAsP/GaP core-shell nanowires

High-Performance Transparent Conducting Oxide Nanowires

Quasi-one-dimensional thermal breakage

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