Semiconductor devices for gamma ray, X ray and nuclear radiation detection

Muggleton, A.H.F.

doi:10.1088/0022-3735/5/5/001

Cited by 13 publications

(3 citation statements)

References 106 publications

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“…Since the successful development of lithium-drifted Ge detectors introduced the significant use of semiconductor crystals for direct detection and spectroscopy of gamma ray in the 1960s [8][9][10][11][12][13], high-purity Ge (HPGe) detectors gradually became a standard technology to achieve spectroscopy or imaging of gamma rays by providing the best compromise between energy resolution and efficiency for high resolution gamma-ray spectroscopy [14][15][16][17]. A small bandgap energy of Ge (∼ 0.7 eV) creates a large number of electron-hole pairs during interaction with gamma rays, which provides good energy resolution.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of high-purity germanium detectors with amorphous germanium contacts

et al. 2019

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Large, high-purity, germanium (HPGe) detectors are needed for neutrinoless doublebeta decay and dark matter experiments. Currently, large (> 4 inches in diameter) HPGe crystals can be grown at the University of South Dakota (USD). We verify that the quality of the grown crystals is sufficient for use in large detectors by fabricating and characterizing smaller HPGe detectors made from those crystals. We report the results from eight detectors fabricated over six months using crystals grown at USD. Amorphous germanium (a-Ge) contacts are used for blocking both electrons and holes. Two types of geometry were used to fabricate HPGe detectors. As a result, the fabrication process of small planar detectors at USD is discussed in great detail. The impact of the procedure and geometry on the detector performance was analyzed for eight detectors. We characterized the detectors by measuring the leakage current, capacitance, and energy resolution at 662 keV with a Cs-137 source. Four detectors show good performance, which indicates that crystals grown at USD are suitable for making HPGe detectors.

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Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of high-purity germanium detectors with amorphous germanium contacts

et al. 2019

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“…For instance scintillation detectors are prohibited unless the photomultiplier is removed from the neighborhood of the magnet and a light pipe used to guide the light from the NaI(T1) crystal to the photomultiplier. There is however some loss of resolution and when it is possible they are replaced by proportional or semi-conductor particle detectors [249,2501 which are quite insensitive to magnetic fields. With conventional electromagnets, Petitt et al [245] have found it advantageous to increase the counting rate by placing the detector inside the tapered pole caps.…”

Section: Re 6 -Reduced H H N Observed In S 5 7 F E Plotted As a Funmentioning

confidence: 99%

High Field Mössbauer Spectroscopy

Chappert

1974

J. Phys. Colloques

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Actuellement des champs magnétiques extérieurs variant entre quelques kOe et 150 kOe sont couramment utilisés en spectroscopie Môssbauer. Dans cet article on passe en revue les possibilités offertes par l'adjonction à un spectromètre Môssbauer classique d'une bobine produisant un champ magnétique intense. Les principales caractéristiques d'expériences typiques ainsi que les récents développements de la spectroscopie Môssbauer sous champ intense sont discutés.

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“…Ge detectors with a large electron/hole barrier height are required to obtain a low leakage current, which is thermally generated in the contact materials. Ge detectors are widely used for γ-ray spectroscopy [1][2][3][4], rare-event physics searches such as neutrinoless doublebeta (0νββ) decay [5][6][7] and dark matter [8][9][10][11], as well as astroparticle physics [12], medical imaging [13] and homeland security [14]. Ge has a relatively small energy band-gap (0.67 eV at room temperature) compared to other semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Implication of the Temperature-Dependent Charge Barrier Height of Amorphous Germanium Contact Detector in Searching for Rare Event Physics

Panth¹,

Wei²,

Mei³

et al. 2021

Preprint

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The exploration of germanium (Ge) detectors with amorphous Ge (a-Ge) contacts has drawn attention to the searches for rare-event physics such as dark matter and neutrinoless double-beta decay. The charge barrier height (CBH) of the a-Ge contacts deposited on the detector surface is crucial to suppress the leakage current of the detector in order to achieve la ow-energy detection threshold and high-energy resolution. The temperature-dependent CBH of a-Ge contacts for three Ge detectors is analyzed to study the bulk leakage current (BLC) characteristics. The detectors were fabricated at the University of South Dakota using homegrown crystals. The CBH is determined from the BLC when the detectors are operated in the reverse bias mode with a guard-ring structure, which separates the BLC from the surface leakage current (SLC). The results show that CBH is temperature dependent. The direct relation of the CBH variation to temperature is related to the barrier inhomogeneities created on the interface of a-Ge and crystalline Ge. The inhomogeneities that occur at the interface were analyzed using the Gaussian distribution model for three detectors. The CBH of a-Ge contact is projected to zero temperature. The implication of the CBH at zero temperature is discussed for Ge detectors with a-Ge contacts in searching for rare-event physics.

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Semiconductor devices for gamma ray, X ray and nuclear radiation detection

Cited by 13 publications

References 106 publications

Fabrication and characterization of high-purity germanium detectors with amorphous germanium contacts

Fabrication and characterization of high-purity germanium detectors with amorphous germanium contacts

High Field Mössbauer Spectroscopy

Implication of the Temperature-Dependent Charge Barrier Height of Amorphous Germanium Contact Detector in Searching for Rare Event Physics

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