Light, MeV-scale dark matter (DM) is an exciting DM candidate that is undetectable by current experiments. A germanium (Ge) detector utilizing internal charge amplification for the charge carriers created by the ionization of impurities is a promising new technology with experimental sensitivity for detecting MeV-scale DM. We analyze the physics mechanisms of the signal formation, charge creation, charge internal amplification, and the projected sensitivity for directly detecting MeV-scale DM particles. We present a design for a novel Ge detector at helium temperature (∼ 4 K) enabling ionization of impurities from DM impacts. With large localized E-fields, the ionized excitations can be accelerated to kinetic energies larger than the Ge bandgap at which point they can create additional electron-hole pairs, producing intrinsic amplification to achieve an ultra-low energy threshold of ∼ 0.1 eV for detecting low-mass DM particles in the MeV scale. Correspondingly, such a Ge detector with 1 kg-year exposure will have high sensitivity to a DM-nucleon cross section of ∼ 5 × 10 −45 cm 2 at a DM mass of ∼ 10 MeV/c 2 and a DM-electron cross section of ∼ 5 × 10 −46 cm 2 at a DM mass of ∼ 1 MeV/c 2 .

By studying charge trapping in germanium detectors operating at temperatures below 10 K, we demonstrate for the first time that the formation of cluster dipole states from residual impurities is responsible for charge trapping. Two planar detectors with different impurity levels and types are used in this study. When drifting the localized charge carriers created by α particles from the top surface across a detector at a lower bias voltage, significant charge trapping is observed when compared to operating at a higher bias voltage. The amount of charge trapping shows a strong dependence on the type of charge carriers. Electrons are trapped more than holes in a p-type detector, while holes are trapped more than electrons in an n-type detector. When both electrons and holes are drifted simultaneously using the widespread charge carriers created by γ rays inside the detector, the amount of charge trapping shows no dependence on the polarity of bias voltage.

Charge trapping degrades the energy resolution of germanium (Ge) detectors, which require increased experimental sensitivity in searching for dark matter and neutrinoless double-beta decay. We investigate the charge trapping processes utilizing nine planar detectors fabricated from USD-grown crystals with well-known net impurity levels. The charge collection efficiency as a function of charge trapping length is derived from the Shockley–Ramo theorem. Furthermore, we develop a model that correlates the energy resolution with the charge collection efficiency. This model is then applied to the experimental data. As a result, charge collection efficiency and charge trapping length are determined accordingly. Utilizing the Lax model (further developed by CDMS collaborators), the absolute impurity levels are determined for nine detectors. The knowledge of these parameters when combined with other traits such as the Fano factor serve as a reliable indicator of the intrinsic nature of charge trapping within the crystals. We demonstrate that electron trapping is more severe than hole trapping in a p-type detector and the charge collection efficiency depends on the absolute impurity level of the Ge crystal when an adequate bias voltage is applied to the detector. Negligible charge trapping is found when the absolute impurity level is less than 1.0 × 1011 cm−3 for collecting electrons and 2.0 × 1011 cm−3 for collecting holes.

For the first time, electrical conduction mechanisms in the disordered material system is experimentally studied for p-type amorphous germanium (a-Ge) used for high-purity Ge detector contacts. The localization length and the hopping parameters in a-Ge are determined using the surface leakage current measured from three high-purity planar Ge detectors. The temperature dependent hopping distance and hopping energy are obtained for a-Ge fabricated as the electrical contact materials for high-purity Ge planar detectors. As a result, we find that the hopping energy in a-Ge increases as temperature increases while the hopping distance in a-Ge decreases as temperature increases. The localization length of a-Ge is on the order of $$2.13^{-0.05}_{+0.07}\mathrm{{A}}^\circ $$ 2 . 13 + 0.07 - 0.05 A ∘ to $$5.07^{-0.83}_{+2.58}\mathrm{{A}}^\circ $$ 5 . 07 + 2.58 - 0.83 A ∘ , depending on the density of states near the Fermi energy level within bandgap. Using these parameters, we predict that the surface leakage current from a Ge detector with a-Ge contacts can be much smaller than one yocto amp (yA) at helium temperature, suitable for rare-event physics searches.

Germanium (Ge) detectors with ability of measuring a single electron-hole (e-h) pair are needed in searching for light dark matter (LDM) down to the MeV scale. We investigate the feasibility of Ge detectors with amorphous-Ge (a-Ge) contacts to achieve the sensitivity of measuring a single e-h pair, which requires extremely low leakage current. Three Ge detectors with a-Ge contacts are used to study the charge barrier height for blocking electrons and holes. Using the measured bulk leakage current and the Döhler-Brodsky model, we obtain the values for charge barrier height and the density of localized energy states near the Fermi energy level for the top and bottom contacts, respectively. We predict that the bulk leakage current is extremely small and can be neglected at helium temperature (∼4 K). Thus, Ge detectors with a-Ge contacts possess the potential to measure a single e-h pair for detecting LDM particles.