2020
DOI: 10.1088/1361-6471/ab9796
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Impact of charge trapping on the energy resolution of Ge detectors for rare-event physics searches

Abstract: Charge trapping degrades the energy resolution of germanium (Ge) detectors, which require increased experimental sensitivity in searching for dark matter and neutrinoless double-beta decay. We investigate the charge trapping processes utilizing nine planar detectors fabricated from USD-grown crystals with well-known net impurity levels. The charge collection efficiency as a function of charge trapping length is derived from the Shockley–Ramo theorem. Furthermore, we develop a model that correlates the energy r… Show more

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Cited by 18 publications
(17 citation statements)
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“…The relationship between the trapping cross-section of charge carriers and the trapping length λ trap is described by the following equation 28,29 :…”
Section: Physical Modelmentioning
confidence: 99%
“…The relationship between the trapping cross-section of charge carriers and the trapping length λ trap is described by the following equation 28,29 :…”
Section: Physical Modelmentioning
confidence: 99%
“…Research and development on zone refining of Ge ingots, growing them into high purity crystals and their characterization are being done at the University of South Dakota [26][27][28][29][30]. Also, we fabricate and characterize the Ge detectors made from the USD grown crystals for rare event searches [31][32][33][34]. After purifying Ge ingots to a level of ∼10 11 /cm 3 by zone refining [29], a single crystal can be grown through the Czochralski method [35].…”
Section: Production Of Charge Carriers Via Phonon Excitation and Ioni...mentioning
confidence: 99%
“…This model was applied to a-Ge contacts on HPGe detectors as well [38]. Leakage current is directly proportional to temperature as reported in these studies [18][19][20][21][34][35][36][37][38][39].…”
Section: I-v-t Characteristics and Cbh Measurementmentioning
confidence: 99%
“…Several papers have been published on the investigation of the CBH of rectifying contacts by studying the current-voltage (I-V) or capacitance-voltage (C-V) characteristics [18][19][20][21][22][23][24][25][26]. In this study, we have used the I-V characteristics at different temperatures.…”
Section: Introductionmentioning
confidence: 99%