Sharp branches of gold nanostars are critical in tuning the plasmonic properties of these nanostars and maximizing the activities in surface-enhanced Raman scattering (SERS). The interaction between the capping ligands and nanostars plays an essential role in determining the morphology of the branches on the gold nanostars. In this Article, we show that 4-mercapto benzoic acid can effectively control the morphology of branched gold nanostars, and these gold nanostars can be used for the colloidal SERS detection of probe molecules at a nanomolar concentration. We also find that the sharp branches on gold nanostars will provide extra SERS activities as compared to the ones with a rough surface. Using the method of principal component analysis, we can easily distinguish the addition of 4-mercapto pyridine molecules at a concentration of 2 nM. Our work indicated the promising applications of these gold nanostars in colloidal SERS studies for various ultrasensitive chemical analyses.

A: The characterization of detectors fabricated from home-grown crystals is the most direct way to study crystal properties. We fabricated planar detectors from high-purity germanium (HPGe) crystals grown at the University of South Dakota (USD). In the fabrication process, a HPGe crystal slice cut from a USD-grown crystal was coated with a high resistivity thin film of amorphous Ge (a-Ge) followed by depositing a thin layer of aluminum on top of the a-Ge film to define the physical area of the contacts. We investigated the detector performance including the I-V characteristics, C-V characteristics and spectroscopy measurements for a few detectors. The results document the good quality of the USD-grown crystals and electrical contacts. K: amorphorous germanium contacts, planar germanium detectors, leakage current, gamma ray spectroscopy 1Corresponding author.

Large, high-purity, germanium (HPGe) detectors are needed for neutrinoless doublebeta decay and dark matter experiments. Currently, large (> 4 inches in diameter) HPGe crystals can be grown at the University of South Dakota (USD). We verify that the quality of the grown crystals is sufficient for use in large detectors by fabricating and characterizing smaller HPGe detectors made from those crystals. We report the results from eight detectors fabricated over six months using crystals grown at USD. Amorphous germanium (a-Ge) contacts are used for blocking both electrons and holes. Two types of geometry were used to fabricate HPGe detectors. As a result, the fabrication process of small planar detectors at USD is discussed in great detail. The impact of the procedure and geometry on the detector performance was analyzed for eight detectors. We characterized the detectors by measuring the leakage current, capacitance, and energy resolution at 662 keV with a Cs-137 source. Four detectors show good performance, which indicates that crystals grown at USD are suitable for making HPGe detectors.

Gold nanostars have unique plasmonic properties that are related to the highly branched nanostructures. However, it is challenging to precisely control these branches. Here we studied the reaction kinetics on the seed-mediated growth process of gold nanostars using in situ UV-vis spectroscopy. The impact of hydroquinone ligands on the formation and evolution of active intermediates was systematically explored. In addition, we improved the classical seed-mediated method to achieve a much better control on the final morphology of gold nanostars by a sudden addition of a high concentration ligand solution. Our method can significantly advance the syntheses of gold nanostars and provide numerous opportunities to prepare nanomaterials with unique morphology and plasmonic properties.

Charge trapping degrades the energy resolution of germanium (Ge) detectors, which require increased experimental sensitivity in searching for dark matter and neutrinoless double-beta decay. We investigate the charge trapping processes utilizing nine planar detectors fabricated from USD-grown crystals with well-known net impurity levels. The charge collection efficiency as a function of charge trapping length is derived from the Shockley–Ramo theorem. Furthermore, we develop a model that correlates the energy resolution with the charge collection efficiency. This model is then applied to the experimental data. As a result, charge collection efficiency and charge trapping length are determined accordingly. Utilizing the Lax model (further developed by CDMS collaborators), the absolute impurity levels are determined for nine detectors. The knowledge of these parameters when combined with other traits such as the Fano factor serve as a reliable indicator of the intrinsic nature of charge trapping within the crystals. We demonstrate that electron trapping is more severe than hole trapping in a p-type detector and the charge collection efficiency depends on the absolute impurity level of the Ge crystal when an adequate bias voltage is applied to the detector. Negligible charge trapping is found when the absolute impurity level is less than 1.0 × 1011 cm−3 for collecting electrons and 2.0 × 1011 cm−3 for collecting holes.

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