1954
DOI: 10.1016/s0031-8914(54)80201-1
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Semiconducting intermetallic compounds

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Cited by 59 publications
(9 citation statements)
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“…Gallium arsenide is a semiconductor with many interesting properties and it has been studied quite extensively since the 111-V compounds were first described by Welker [324]. A recent article by Oliver [325] gives a brief account of the preparation, physical properties, and the most important applications of gallium arsenide.…”
Section: Gallium Arsenidementioning
confidence: 99%
“…Gallium arsenide is a semiconductor with many interesting properties and it has been studied quite extensively since the 111-V compounds were first described by Welker [324]. A recent article by Oliver [325] gives a brief account of the preparation, physical properties, and the most important applications of gallium arsenide.…”
Section: Gallium Arsenidementioning
confidence: 99%
“…A photovoltaic effect in a GaAs p-n homojunction was first reported by Welker (1954), followed a year later by Gremmelmaier (1955), who obtained ∼1% efficiency in a polycrystalline p-n homojunction solar cell. Jenny et al (1956) of RCA Laboratories followed up with a >6%-efficient monocrystalline GaAs p-n cell.…”
Section: Gaas and Iii-v Multijunction Cellsmentioning
confidence: 92%
“…The most probable value of the band gap, according to measurements of the optical absorption edge, is E g = 1.62zb0.03 e y i4,i5 This va i ue i s confirmed by the temperature dependence of the intrinsic conductivity. 15 Measurements of the pressure dependence of the optical absorption edge 16 suggest that the minimum of the conduction band lies along the [100] axis; the effective mass 17 of the electrons is m/wo=0.39dz0.06. A broad infrared absorption band around 0.3 eV displaying the behavior of an interband transition was observed in n-type material.…”
Section: Band Structure Of Alsbmentioning
confidence: 99%