Semiconducting intermetallic compounds

Welker, H.

doi:10.1016/s0031-8914(54)80201-1

Cited by 59 publications

(9 citation statements)

References 15 publications

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“…Gallium arsenide is a semiconductor with many interesting properties and it has been studied quite extensively since the 111-V compounds were first described by Welker [324]. A recent article by Oliver [325] gives a brief account of the preparation, physical properties, and the most important applications of gallium arsenide.…”

Section: Gallium Arsenidementioning

confidence: 99%

Band‐to‐Band Radiative Recombination in Groups IV, VI, and III–V Semiconductors (II)

Varshni

1967

Physica Status Solidi (b)

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Section: Gallium Arsenidementioning

confidence: 99%

Band‐to‐Band Radiative Recombination in Groups IV, VI, and III–V Semiconductors (II)

Varshni

1967

Physica Status Solidi (b)

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“…A photovoltaic effect in a GaAs p-n homojunction was first reported by Welker (1954), followed a year later by Gremmelmaier (1955), who obtained ∼1% efficiency in a polycrystalline p-n homojunction solar cell. Jenny et al (1956) of RCA Laboratories followed up with a >6%-efficient monocrystalline GaAs p-n cell.…”

Section: Gaas and Iii-v Multijunction Cellsmentioning

confidence: 92%

The Past and Present

Archer¹

2014

Series on Photoconversion of Solar Energy

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“…The most probable value of the band gap, according to measurements of the optical absorption edge, is E g = 1.62zb0.03 e y i4,i5 This va i ue i s confirmed by the temperature dependence of the intrinsic conductivity. 15 Measurements of the pressure dependence of the optical absorption edge 16 suggest that the minimum of the conduction band lies along the [100] axis; the effective mass 17 of the electrons is m/wo=0.39dz0.06. A broad infrared absorption band around 0.3 eV displaying the behavior of an interband transition was observed in n-type material.…”

Section: Band Structure Of Alsbmentioning

confidence: 99%

Reflectivity, Photoelectric Emission, and Work Function of AlSb

Fischer¹

1965

Phys. Rev.

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The reflectivity and photoelectric emission from hp = 2to6 eV, and the work function, have been measured for (110) surfaces of AlSb (p type, iVA = 2Xl0 17 cm~3) cleaved in high vacuum and covered with various amounts of cesium. The yield of the clean surface is similar to that of other measured III-V compounds. The threshold for photoelectric emission is 5.22±0.02 eV, corresponding to excitation from the top of the valence band. With a band gap E g = 1.62 eV, the electron affinity is 3.6 eV. The work function is 4.86±0.05 eV and the Fermi level lies 0.36db0.07 eV above the top of the valence band at the surface. By deposition of cesium, the work function was lowered to 1.37 eV and the resulting yield spectrum shows structure related to that of the reflectivity. The combined results of reflectivity and photoelectric emission are discussed in terms of the band structure of AlSb.

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Semiconducting intermetallic compounds

Cited by 59 publications

References 15 publications

Band‐to‐Band Radiative Recombination in Groups IV, VI, and III–V Semiconductors (II)

Band‐to‐Band Radiative Recombination in Groups IV, VI, and III–V Semiconductors (II)

The Past and Present

Reflectivity, Photoelectric Emission, and Work Function of AlSb

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