Semi-transparent Schottky junction solar cell based on evaporated CdSe thin films: Influence of post-deposition air-annealing

Sahebi, Ramezan; Roknabadi, Mahmood Rezaei; Behdani, Mohammad

doi:10.1016/j.ijleo.2020.164204

Cited by 27 publications

(5 citation statements)

References 43 publications

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“…Various structural evaluations were performed utilizing relative equations in order to derive the precise structural specifications [31] and are presented in Table 1. The lattice parameters were estimated to be in the range 4.238-4.254 Å for a and 6.920-6.747 Å for c in accordance with the previous studies [32,33]. This indicates that the CdSe lattice was not dramatically affected by the atomic density of indium [30].…”

Section: Structural Properties Analysissupporting

confidence: 88%

Optoelectrical Properties of Treated CdSe Thin Films with Variations in Indium Chloride Concentration

et al. 2023

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The effect of a nontoxic chloride treatment on the crystallinity and optoelectrical characteristics of a CdSe thin film was studied. A detailed comparative analysis was conducted utilizing four molarities (0.01 M, 0.10 M, 0.15 M, and 0.20 M) of indium (III) chloride (InCl3), where the results showed a notable improvement in CdSe properties. The crystallite size of treated CdSe samples increased from 31.845 nm to 38.819 nm, and the strain in treated films dropped from 4.9 × 10−3 to 4.0 × 10−3, according to XRD measurements. The highest crystallinity resulted from the 0.10 M InCl3-treated CdSe films. The In contents in the prepared samples were verified by compositional analysis, and FESEM images from treated CdSe thin films demonstrated compact and optimal grain arrangements with passivated grain boundaries, which are required for the development of a robust operational solar cell. The UV-Vis plot, similarly, showed that the samples were darkened after treatment and the band gap of 1.7 eV for the as-grown samples fell to roughly 1.5 eV. Furthermore, the Hall effect results suggested that the carrier concentration increased by one order of magnitude for samples treated with 0.10 M of InCl3, but the resistivity remained in the order of 103 ohm/cm2, suggesting that the indium treatment had no considerable effect on resistivity. Hence, despite the deficit in the optical results, samples treated at 0.10 M InCl3 showed promising characteristics as well as the viability of treatment with 0.10 M InCl3 as an alternative to standard CdCl2 treatment.

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Section: Structural Properties Analysissupporting

confidence: 88%

Optoelectrical Properties of Treated CdSe Thin Films with Variations in Indium Chloride Concentration

et al. 2023

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“…CdSe thin films grown by CBD [21] were reported to have a cubic structure, while the electrodeposition method [22] produced a hexagonal structure. In addition, it has been reported that the same deposition method could exhibit different (amorphous/hexagonal) structures [13,23]. After using the sputtering method, an amorphous structure was reported by Chunxiu et al [14], while a cubic structure has been found in other studies [24].…”

Section: Xrd Analysismentioning

confidence: 97%

“…It is an n-type semiconductor. CdSe thin films can be utilized for photovoltaic applications because of a suitable direct band gap of about 1.74 eV for bulk CdSe material, good electrical conductivity, and high absorption [11][12][13]. Different techniques, such as RF magnetron sputtering, chemical bath deposition (CBD), thermal evaporation, pulsed laser deposition (PLD), electrodeposition, and spray pyrolysis have been applied so far in depositing CdSe thin films [14].…”

Section: Introductionmentioning

confidence: 99%

The Role of Deposition Temperature in the Photovoltaic Properties of RF-Sputtered CdSe Thin Films

et al. 2021

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Cadmium selenide (CdSe) thin films were grown on borosilicate glass substrates using the RF magnetron sputtering method. In this study, CdSe thin film was deposited at a deposition temperature in the range of 25 °C to 400 °C. The influence of deposition or growth temperature on the structural, morphological, and opto-electrical properties of CdSe films was investigated elaborately to achieve a good-quality window layer for solar-cell applications. The crystal structure, surface morphology, and opto-electrical characteristics of sputtered CdSe films were determined using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), UV–Vis spectrophotometry, and Hall effect measurement, respectively. The XRD results revealed the polycrystalline nature of CdSe, with a hexagonal structure having a strong preferential orientation toward the (002) plane. As evident from the FESEM images, the average grain size and surface morphology of the films were dependent on deposition temperatures. The carrier concentration was obtained as 1014 cm−3. The band gap in the range of 1.65–1.79 eV was found. The explored results suggested that sputtered CdSe thin film deposited at 300 °C has the potential to be used as a window layer in solar cells.

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“…It is an n-type semiconductor. thin films of CdSe can be utilized for photovoltaic applications because of a suitable direct band gap for bulk CdSe material, good electrical conductivity, and high absorption [4][5][6]. As a result of the ionic produced by Cd +2 and Se -2 ions exceeding that of CdSe, CdSe is formed into thin films.…”

Section: Introductionmentioning

confidence: 99%

Effect of silver-doping on the structural, topography and optical CdSe thin films

Jasim¹,

Hadi²,

Chiad³

et al. 2023

JOR

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Using thermal evaporation, thin films of silver-doped CdSe were synthesized on glass bases. A hexagonal structure with a preference orientation along (100) plane according to the X-ray diffraction pattern. The surface topography was determined using Atomic Force Microscopy (AFM). AFM detects spherical nature nanoparticles and roughness rate of the CdSe thin film decreases and the root mean square decreases with (2 and 4) % doping in silver. As the doping content increase, the optical energy bandgap decrease from 1.85 eV to 1.75 eV. Optical analysis indicates that Ag doping in CdSe results in a redshift in band edge.

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Semi-transparent Schottky junction solar cell based on evaporated CdSe thin films: Influence of post-deposition air-annealing

Cited by 27 publications

References 43 publications

Optoelectrical Properties of Treated CdSe Thin Films with Variations in Indium Chloride Concentration

Optoelectrical Properties of Treated CdSe Thin Films with Variations in Indium Chloride Concentration

The Role of Deposition Temperature in the Photovoltaic Properties of RF-Sputtered CdSe Thin Films

Effect of silver-doping on the structural, topography and optical CdSe thin films

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