The Role of Deposition Temperature in the Photovoltaic Properties of RF-Sputtered CdSe Thin Films

Abstract

Cadmium selenide (CdSe) thin films were grown on borosilicate glass substrates using the RF magnetron sputtering method. In this study, CdSe thin film was deposited at a deposition temperature in the range of 25 °C to 400 °C. The influence of deposition or growth temperature on the structural, morphological, and opto-electrical properties of CdSe films was investigated elaborately to achieve a good-quality window layer for solar-cell applications. The crystal structure, surface morphology, and opto-electrical characteristics of sputtered CdSe films were determined using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), UV–Vis spectrophotometry, and Hall effect measurement, respectively. The XRD results revealed the polycrystalline nature of CdSe, with a hexagonal structure having a strong preferential orientation toward the (002) plane. As evident from the FESEM images, the average grain size and surface morphology of the films were dependent on deposition temperatures. The carrier concentration was obtained as 1014 cm−3. The band gap in the range of 1.65–1.79 eV was found. The explored results suggested that sputtered CdSe thin film deposited at 300 °C has the potential to be used as a window layer in solar cells.

Impact of Annealing Temperature on the Morphological, Optical and Photoelectrochemical Properties of Cauliflower-like CdSe0.6Te0.4 Photoelectrodes; Enhanced Solar Cell Performance

“…Among these binary photoelectrode materials, CdSe and CdTe materials provided band gap values between 1.45 and 1.75 eV [1,[21][22][23][24][25][26][27][28][29][30]; this indicates that the lower band gap energy photoelectrodes provided higher optical absorption. The higher optical absorption of the photoelectrode material provides more electron-hole pairs as well as a higher rate of the recombination rates of charge carriers [21,22]. The significance of selecting particular compositions is that the CdSe 0.6 Te 0.4 electrode shows a sharp transition from the properties of CdSe to those typical of CdTe in the composition [31].…”

“…To date, several binary metal chalcogenide photoelectrode materials have been developed into PECs as photoabsorber layers, including CdS [13,14], CdSe [15,16], CdTe [17], ZnS [18], ZnSe [19], and ZnSe/CdSe [20]. Among these binary photoelectrode materials, CdSe and CdTe materials provided band gap values between 1.45 and 1.75 eV [1,[21][22][23][24][25][26][27][28][29][30]; this indicates that the lower band gap energy photoelectrodes provided higher optical absorption. The higher optical absorption of the photoelectrode material provides more electron-hole pairs as well as a higher rate of the recombination rates of charge carriers [21,22].…”

Effect of Sodium Selenosulfate Concentration on Microstructural, Morphological, and Luminescence Characteristics of Cadmium Selenide Nanoparticles

“…In recent years, CdSe nanoparticles have been very interesting in the study community with their maximum demands regarding their application in optical electronics. CdSe was a largely used semiconductor compound because of its direct bandgap (1.74 ev) at a normal temperature radius of 5.6 nm from Bohr's theory [2,3]. The size of cadmium selenide increased the volume ratio; so, it can be found vastly in different fields from lightemitting diode to photovoltaic cells.…”

Polymeric Droplets on SiO2 Nanoparticles through Wastewater Treatment of Carbon-Based Contaminants in Photocatalytic Degradation

“…Numerous researches have been conducted to attain the operation of observable light for TiO 2 material, like transitional metallic ions (ZnO, SiO 2 ) and nonmetal element doping such as carbon nanotube (C-N-T). Nonmetal element doping conventions bandgap of titanium dioxide by providing a novel mixture energy band whose excite level is slightly higher than that of the valence band of titanium dioxide (TiO 2 ) [32][33][34][35]. But these methods of preparation cannot improve wastewater treatment unless the alteration of property of SiO 2 nanoparticle.…”