2004
DOI: 10.1016/j.apsusc.2004.05.218
|View full text |Cite
|
Sign up to set email alerts
|

SEM and HRTEM study of porous silicon—relationship between fabrication, morphology and optical properties

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2

Citation Types

2
29
0
1

Year Published

2008
2008
2015
2015

Publication Types

Select...
5
3
1

Relationship

0
9

Authors

Journals

citations
Cited by 61 publications
(32 citation statements)
references
References 10 publications
2
29
0
1
Order By: Relevance
“…The peak of emission is observed at 650 nm, and the band gap is 1.91 eV. The reason of increasing PL peak can be understood by quantum confinement mechanism [31,32]. Based on that, decreasing of Si size with increasing current density is revealed in monotonous blue shift of PL maximum at room temperature.…”
Section: Methodsmentioning
confidence: 98%
“…The peak of emission is observed at 650 nm, and the band gap is 1.91 eV. The reason of increasing PL peak can be understood by quantum confinement mechanism [31,32]. Based on that, decreasing of Si size with increasing current density is revealed in monotonous blue shift of PL maximum at room temperature.…”
Section: Methodsmentioning
confidence: 98%
“…After the etching process, the samples were washed into absolute ethanol solution and deionized water again, then they were dried oven for tests. The surface morphology was studied with Zeiss EVO MA10 (Carl-Zeiss, Germany) scanning electronic microscope (SEM) [16] .…”
Section: Methodsmentioning
confidence: 99%
“…It demonstrates rather bright photoluminescence (PL) in the visible spectral range [4]. Pores in por-Si can be extended from several nm to several dozens of μm and they are usually arranged perpendicular to the surface of the Si substrate [5].…”
mentioning
confidence: 99%