SEM analysis and selenization of Cu–In alloy films produced by co-sputtering of metals

Volobujeva, Olga; Altosaar, M.; Raudoja, J.; Mellikov, E.; Grossberg, Maarja; Kaupmees, L.; Barvinschi, Paul

doi:10.1016/j.solmat.2008.01.007

Cited by 55 publications

(31 citation statements)

References 19 publications

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“…As Fig. 4 also indicates, the CIS grain formation during the extended selenization favors the (1 1 2) preferred orientation at 400 1C, and similar results were reported in earlier works [14,15]. Even the CIS (2 2 0/2 0 4)-preferred film will be transformed into a (1 1 2)-preferred one with prolonged selenization [24], and these results suggest that a short duration of 400 1C selenization is essential to avoid the growth of a (1 1 2)-preferred CIS film.…”

Section: Influence Of the First-step Selenization On Cis Crystallizationsupporting

confidence: 89%

“…Only a strong (0 0 2) diffraction peak of AZO film is observed, and the co-sputtered Cu/In precursor layer is an amorphous film. The precursor film is different from most reported in the literature, in which the co-sputtered precursor has Cu-In binary phases, such as Cu 11 In 9 [12][13][14][15]. In this study, the as-deposited Cu-In precursor film has rounded grains 300-500 nm in diameter and with a rough surface, as the inset picture shown.…”

Section: Resultsmentioning

confidence: 58%

“…The significant change in R suggests that the near surface film is more favorable to the CIS (1 1 2) growth than that of the bottom film. The (1 1 2)-preferred CIS growth is possibly attributed to the Cu-rich CIS film near the surface after selenization [13,15], as this could hinder the attainment of the CIS-based (2 2 0/2 0 4) preferred orientation [6,28].…”

Section: Characterization Of the Film Surface And Azo Interfacementioning

confidence: 99%

See 2 more Smart Citations

Mechanism of forming (2 2 0/2 0 4)-oriented CuInSe2 film on Al:ZnO substrate using a two-step selenization process

Fang

Perng

Chen

2011

Journal of Crystal Growth

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Section: Influence Of the First-step Selenization On Cis Crystallizationsupporting

confidence: 89%

Section: Resultsmentioning

confidence: 58%

Section: Characterization Of the Film Surface And Azo Interfacementioning

confidence: 99%

See 1 more Smart Citation

Mechanism of forming (2 2 0/2 0 4)-oriented CuInSe2 film on Al:ZnO substrate using a two-step selenization process

Fang

Perng

Chen

2011

Journal of Crystal Growth

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“…Despite the massive application potential of the coating process as an expected high value-added technology, the implementation of the coating process in target material manufacturing has resulted in near-zero research outcomes. As for Cu-In-based nonferrous metals, the scope of research is limited to the properties of Cu-In-based thin films manufactured via PVD and CVD ( Ref 4,7,13). No studies have been carried out to investigate Cu-In based coating manufacture and properties for application as target material using cold spraying.…”

Section: Introductionmentioning

confidence: 99%

Manufacturing and Macroscopic Properties of Cold Sprayed Cu-In Coating Material for Sputtering Target

Jin

Cho

Park³

et al. 2010

J Therm Spray Tech

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This study attempted to manufacture a Cu-In coating layer via the cold spray process and to investigate the applicability of the layer as a sputtering target material. In addition, changes made to the microstructure and properties of the layer due to annealing heat treatment were evaluated, compared, and analyzed. To examine the microstructural and property changes made to the Cu-In coating layer and Cu coating layer (comparison material), ICP, XRD, SEM, and other tests were conducted; purity, density, hardness, porosity, and bond-strength were measured. The results showed that coating layers with thickness of 20 mm (Cu) and 810 lm (Cu-In) could be manufactured via cold spraying under optimal process conditions. With the Cu-In coating layer, the pure Cu and intermetallic compounds of Cu 7 In 3 and CuIn 4 were found to exist inside the layer regardless of annealing heat treatment. The preannealing inconsistent microstructure of the layer, whose phases were difficult to distinguish was found to have transformed into one with clearer phase distinction and fine, consistent grains following thermal treatment via a progress of recovery, recrystallization, and grain growth. The porosity and hardness values of the coating layers were 1.4% and 133.9 HV, respectively, for Cu and 3.54% and 476.6 HV, respectively, for Cu-In. The values of the Cu-In layer were higher than those of the Cu layer in terms of porosity and hardness, which declined drastically after annealing. With the porosity of the Cu-In coating layer in particular, the higher value found during the preannealing stage dropped to 0.36% after heat treatment of 773 K/1 h as the level on a par with pure Cu (0.44%), thus indicating the improved quality of the Cu-In layer. Moreover, the results of the bond-strength measurement performed on the Cu-In coating layer and annealing treated materials revealed the strength to be relatively high for heat treated coating layers. Based on the findings of this study and on the comparison and discussion of the properties that are typically required of the target material, the Cu-In coating layer manufactured via cold spray process and annealing heat treatment can be said to be applicable as sputtering target in the future.

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“…The precursors not only contain Cu, In and Se, but also some binary compounds, including Cu 11 In 9 , Cu x Se and In 2 Se 3, which were produced in the electrodeposition and annealing process. Different precursors have different reactions and temperature requirements to form CIS, and other reactions lead to a uniform structure [9]. Intensity, a.u.…”

Section: Resultsmentioning

confidence: 99%

Synthesis of CuInSe2 thin films from electrodeposited Cu11In9 precursors by two-step annealing

Chang¹,

Hu²,

Lee³

2014

J. Electrochem. Sci. Eng.

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SEM analysis and selenization of Cu–In alloy films produced by co-sputtering of metals

Cited by 55 publications

References 19 publications

Mechanism of forming (2 2 0/2 0 4)-oriented CuInSe2 film on Al:ZnO substrate using a two-step selenization process

Mechanism of forming (2 2 0/2 0 4)-oriented CuInSe2 film on Al:ZnO substrate using a two-step selenization process

Manufacturing and Macroscopic Properties of Cold Sprayed Cu-In Coating Material for Sputtering Target

Synthesis of CuInSe2 thin films from electrodeposited Cu11In9 precursors by two-step annealing

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