volume 106, issue 1, P31-35 1981
DOI: 10.1002/pssb.2221060103
View full text
|
|
Share

Abstract: Self-trapped hole (STH) and self-trapped exciton (STE) states which are formed in Y3AI5Ol2, Y,SiO,, and TR,Si,O, crystals under y-irradiation in the temperature interval of 77 to 200 K are investigated. The STH is shown to be molecular 0;-, absorbing a t 1.6 eV (for Y,A1501z) and a t 1.65 eV (for Y,SiO,) and causing the eleven-component EPR signal ; the corresponding S!I' E emits a t 3.9 and 3.6 eV. In metal-doped crystals the exciton and hole delocalization lead to a decreasing of the emission energy, to a s…

Expand abstract

Search citation statements

Order By: Relevance

Citation Types

0
3
0

Paper Sections

0
0
0
0
0

Publication Types

0
0
0
0

Relationship

0
0

Authors

Journals