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Self-trapped hole (STH) and self-trapped exciton (STE) states which are formed in Y3AI5Ol2, Y,SiO,, and TR,Si,O, crystals under y-irradiation in the temperature interval of 77 to 200 K are investigated. The STH is shown to be molecular 0;-, absorbing a t 1.6 eV (for Y,A1501z) and a t 1.65 eV (for Y,SiO,) and causing the eleven-component EPR signal ; the corresponding S!I' E emits a t 3.9 and 3.6 eV. In metal-doped crystals the exciton and hole delocalization lead to a decreasing of the emission energy, to a short-wave shift of the absorption band, and to the growth of the anneal temperature. At the self-localization temperature excitons are proved to migrate by jump diffusion and to transfer energy to the impurity ions exciting their emission.