Silicate Glass-Based Nanocomposite Scintillators

Recent progress on synthesis, multi-scale structure, and properties of Y–Si–O oxides

“…The impedance spectrum for the pure isopropanol was a single semicircle, which corresponded to the specific conductivity of (1?0060?02)610 27 S cm 21 and a dielectric constant of e r 525?663?7. The resistances of the Y-Si-O suspensions obtained from the impedance spectra were much lower, resulting in a specific conductivity of (1?0260?01)610 24 S cm 21 and a dielectric constant of e r 531?762?9. During deposition, the observed total resistance R suspension zR deposition continuously increased with time and coating thickness.…”

“…The first part focuses on synthesis of powders, sintering of bulk ceramics and deposition of coatings/films. Owing to the complex polymorphism of yttrium silicates [11][12][13][20][21][22] and the strict stoichiometric ratio required for the starting materials, 23,24 the synthesis of single-phase yttrium silicates is a major obstacle to the research and application of these oxides. At present, the main preparation methods employed for powders are sol-gel (including the precipitation technique), [25][26][27][28][29][30][31][32][33][34] hydrothermal synthesis, [35][36][37][38] solidsolid reaction, [39][40][41][42] solid-liquid reaction, [43][44][45][46][47] high-P/high-T synthesis, 21 and molten salt flux growth (or the Czochralski technique); 20,39,[48][49][50][51] and for coatings and thin films are chemical vapour deposition (CVD), atomic layer deposition (ALD), radio frequency (rf)-sputtering, magnetron sputtering, pulsed laser deposition (PLD), plasma spraying, electrophoretic deposition (EPD), spin coating, and dip coating, 40,[52][53][54]…”

“…Phase diagrams of a Y 2 O 3 –SiO 2 binary system, 23,24 and b Y 2 O 3 –SiO 2 –LiO 2 ternary system 66 …”

Ferroelectric Glass-Ceramic Systems for Energy Storage Applications

“…In such a case, the desired crystalline phase can be induced to form without devitrification of the glass matrix. The crystallite size generally increases with increasing temperature, as shown by the micrographs in Figure 8 [44].…”

Reactions between Si melt and various ceramics

“…A large number of dislocations, a crack, and dislocation pileups appeared near the Si-SiO 2 interface. After contacting SiO 2 and Si, the oxygen diffused into the Si melt and an excess of oxygen atoms could be precipitated, causing stress that can easily induce dislocations and stack-ing faults [14]. Figure 4c shows the EDS line scan of the Si-SiO 2 contact.…”