Self-structuring of buried SiO2 precipitate layers during IBS: A computer simulation

Precipitate coarsening and self organization in erbium-doped silica

“…Thus a scale factor of 1.3 between s and L is found, which is a factor of 2 smaller than that found by simulations in Ref. 20. However, since this simple estimate indicates that the observed layer separation and s are of the same order of magnitude, we conclude that the selfstructuring mechanism found here possibly is identical to that described previously in Refs.…”

“…However, since this simple estimate indicates that the observed layer separation and s are of the same order of magnitude, we conclude that the selfstructuring mechanism found here possibly is identical to that described previously in Refs. 16,20. Moreover, since the layer separation is significantly larger than the width of the initial dopant region it is unlikely that the layering is caused by ripening of a spatial inhomogeneity in the initial precipitate size distribution.…”

“…18͒ in silicon, and Cu in silica, 19 and the general mechanisms have been investigated theoretically. 16,20 Of particular interest for the present study is the average distance L between selforganized layers estimated in Refs. 20,21 to scale with the diffusional screening length s :…”

ZnTe precipitates formed in SiO2 by sequential implantation of Zn+ and Te+ ions

“…The second band spreads over 20-30 nm at a depth of about 110 nm with NCs significantly greater than in the first band. Previous calculations of Reiss and Heinig [22] predict this phenomenon, which seems to be an intrinsic self-organization effect of NCs by the Ostwald ripening mechanism in inhomogeneous systems [23,24]. There is no spectacular evolution of these two bands with annealing time, except the spreading of the second band corresponding to the coarsening (by migration and coalescence) of the nanoprecipitates.…”

Complementary application of Raman scattering and GISAXS in characterization of embedded semiconductor QDs

“…The analysis has shown that, for the as-implanted sample, the average diameter D = 5.2 ± 0.3 nm and that this value, within the margin of error, does not change with annealing up to 500 • C. The average size of the nanoparticles increases somewhat after 700 and 800 • C annealing to 5.8 ± 0.3 and 6.3 ± 0.3, respectively. However, annealing at T a = 1000 • C produced strong increase of R g , suggesting that the Ostwald ripening processes is effective [13], leading to the formation of large QDs, with average diameter, D, larger than 13 nm. The interparticle distance, determined from the GISAXS peak positions, was around 9.5 nm in all cases, except 1000 • C-annealing.…”