Self-Heating Induced Interchannel V<sub>t</sub> Difference of Vertically Stacked Si Nanosheet Gate-All-Around MOSFETs

Chung, Chia-Che; Ye, Hung-Yu; Lin, Hsin-Cheng; Wan, Weier; Yang, Meng-Ta; Liu, C. W.

doi:10.1109/led.2019.2945474

Cited by 15 publications

(5 citation statements)

References 33 publications

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“…Furthermore, the Fourier spectrum shows that the frequency of the acoustic signal in the thinnest nickel film can extend to 1.4 THz, much higher than other previous works around 0.7 THz with a single aluminum layer. To estimate the spatial resolution, we assumed silicon ( V a = 8433 m/s), one of the most widely used material in semiconductor industry, − as the measured material. The corresponding axial resolution in Si is equivalent to half of the spatial pulse length, defined as half of the product of the wavelength and the number of cycles in a pulse of ultrasound.…”

Section: Resultsmentioning

confidence: 99%

Terahertz Photoacoustic Generation Using Ultrathin Nickel Nanofilms

Chou

Shen

et al. 2021

J. Phys. Chem. C

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Picosecond ultrasonic laser sonar (PULSE), one of the noninvasive technologies with a high thickness sensitivity, is capable of probing multilayer films directly on the production wafers. To reach high spatial resolution in the current PULSE system, generation of terahertz photoacoustic pulses through an ultrathin metal film has been the focus of recent studies. In this study, we propose and demonstrate the high potential of ultrathin nickel (Ni) films for THz photoacoustic generation. After femtosecond laser excitation, the photoacoustic frequency launched by the ultrathin Ni nanofilms could be up to 1.4 THz, corresponding to a record-breaking spatial resolution in the single metallic layer system. We discuss the detailed thickness-dependent mechanism with the two-temperature model, which indicates that the ultrahigh-frequency acoustic signals were generated due to the significant contribution of hot electron pressure in Ni, very different from the case for gold. By looking into the ultrafast hot electron relaxation mechanism, our results provide a guideline to further break the technical limit of the metallic terahertz photoacoustic frequency generation in the near future.

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Section: Resultsmentioning

confidence: 99%

Terahertz Photoacoustic Generation Using Ultrathin Nickel Nanofilms

Chou

Shen

et al. 2021

J. Phys. Chem. C

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“…These factors lead to SHE issues being prominent in NSFET. The SHE can cause degradation of electrical performance and bring about reliability issues, ultimately decreasing the device's lifetime significantly [8][9][10][11][12]. Some researchers have conducted a series of investigations into SHE issues, including compact models, optimization technologies, and self-heating mechanisms [13][14][15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

The Impact of Ambient Temperature on Electrothermal Characteristics in Stacked Nanosheet Transistors with Multiple Lateral Stacks

Zhao,

Cao,

Wang

et al. 2023

Nanomaterials

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With characteristic size scaling down to the nanoscale range, the confined geometry exacerbates the self-heating effect (SHE) in nanoscale devices. In this paper, the impact of ambient temperature (Tamb) on the SHE in stacked nanosheet transistors is investigated. As the number of lateral stacks (Nstack) increases, the nanoscale devices show more severe thermal crosstalk issues, and the current performance between n- and p-type nanoscale transistors exhibits different degradation trends. To compare the effect of different Tamb ranges, the temperature coefficients of current per stack and threshold voltage are analyzed. As the Nstack increases from 4 to 32, it is verified that the zero-temperature coefficient bias point (VZTC) decreases significantly in p-type nanoscale devices when Tamb is above room temperature. This can be explained by the enhanced thermal crosstalk. Then, the gate length-dependent electrothermal characteristics with different Nstacks are investigated at various Tambs. To explore the origin of drain current variation, the temperature-dependent backscattering model is utilized to explain the variation. At last, the simulation results verify the impact of Tamb on the SHE. The study provides an effective design guide for stacked nanosheet transistors when considering multiple stacks in circuit applications.

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“…Intuitively, it is a technological challenge for the semiconductor industry to eradicate the SHE in CMOS nanoscale NS-FET devices. Many research group has worked to alleviate the SHEs in nanoscale MOSFETs [12][13][14][15][16][17]. Hetero interfacial thermal resistance (HITR) due to weak electron-phonon interaction and phonon scattering at the hetero-interface which will enhance the SHE and the drive current will be degraded further.…”

Section: Introductionmentioning

confidence: 99%

“…The thermal effects can be mitigated by properly optimizing the device and its multiple array layout designs by considering the dependence of thermal conductivity on temperature and silicon thickness in the presence of anisotropy in nanosheet FETs [15]. The SHEs of PMOS is comparatively severe than NMOS due to its wider channel width which will cause V T mismatch and can be mitigated by using shorter nanosheet width, longer pitch, and less number of channels [16]. These mentioned nanoscale CMOS devices' SHEs are dependent on interface thermal contact resistance (R th,DSG ) and distributed thermal resistance (R th,Dist ) which are closely related to many factors, such as interface, electrode material, and contact dimension.…”

Section: Introductionmentioning

confidence: 99%

Investigation of ambient temperature and thermal contact resistance induced self-heating effects in nanosheet FET

Rathore¹,

Jaisawal²,

Suryavanshi³

et al. 2022

Semicond. Sci. Technol.

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Self-heating effect (SHE) is a severe issue in advanced nano-scaled devices such as stacked nanosheet field-effect transistors (NS-FET), which raises the device temperature (TD), that ultimately affects the key electrical characteristics, i.e., threshold voltage (VT), DIBL, subthreshold slope (SS), IOFF, ION, etc. SHE puts design constraints in the advanced CMOS logic devices and circuits. In this paper, we thoroughly investigated the impact of ambient temperature and interface thermal contact resistance induced-self heating effect in the NS-FET using extensive numerical simulations. The weak electron-phonon coupling, phonon scattering, and the ambient temperature-induced joule energy directly coupled with thermal contact resistance cause the SHE-induced thermal degradation, which increases the device temperature (TD) and affects the device reliability. The baseline NS-FET is well-calibrated with the experimental data and 3D quantum corrected drift-diffusion coupled hydrodynamic and thermodynamic transport models is used in our TCAD framework to estimate the impact of ambient temperature and interface thermal contact resistance on the device performance. Moreover, we also evaluate the SHE-induced performance comparison of NS-FET with conventional FinFET and found that thermal degradation in NS-FET potentially worsen the electrical characteristics. Thus, a detailed TCAD analysis shows that the ambient temperature and interface thermal contact resistances deteriorate the effective thermal resistance (Reff) and device performance metrics.

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Self-Heating Induced Interchannel V_t Difference of Vertically Stacked Si Nanosheet Gate-All-Around MOSFETs

Cited by 15 publications

References 33 publications

Terahertz Photoacoustic Generation Using Ultrathin Nickel Nanofilms

Terahertz Photoacoustic Generation Using Ultrathin Nickel Nanofilms

The Impact of Ambient Temperature on Electrothermal Characteristics in Stacked Nanosheet Transistors with Multiple Lateral Stacks

Investigation of ambient temperature and thermal contact resistance induced self-heating effects in nanosheet FET

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Self-Heating Induced Interchannel Vt Difference of Vertically Stacked Si Nanosheet Gate-All-Around MOSFETs

Cited by 15 publications

References 33 publications

Terahertz Photoacoustic Generation Using Ultrathin Nickel Nanofilms

Terahertz Photoacoustic Generation Using Ultrathin Nickel Nanofilms

The Impact of Ambient Temperature on Electrothermal Characteristics in Stacked Nanosheet Transistors with Multiple Lateral Stacks

Investigation of ambient temperature and thermal contact resistance induced self-heating effects in nanosheet FET

Contact Info

Product

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About

Self-Heating Induced Interchannel V_t Difference of Vertically Stacked Si Nanosheet Gate-All-Around MOSFETs