2017
DOI: 10.1063/1.4979587
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Self-driven visible-blind photodetector based on ferroelectric perovskite oxides

Abstract: Ultraviolet photodetectors have attracted considerable interest for a variety of applications in health, industry, and science areas. Self-driven visible-blind photodetectors represent an appealing type of sensor, due to the reduced size and high flexibility. In this work, we employed BaTiO3 (BTO) single crystals with a bandgap of 3.2 eV for the realization of a self-driven ultraviolet detector, by utilizing the ferroelectric properties of BTO. We found that the sign of the photocurrent can be reversed by flip… Show more

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Cited by 69 publications
(44 citation statements)
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“…As depicted in Figure a, 1 exhibits an absorption cut‐off at 460 nm, and its band gap is estimated as 2.70 eV, based on the Tauc equation, indicating that visible light and ultraviolet light can be absorbed by 1 to generate charge carriers and result in an interesting photoelectric effect. The band gap is narrower than those of the most studied ferroelectric BaTiO 3 (≈3.2 eV), LiNbO 3 (≈3.78 eV), and Pb(Zr,Ti)O 3 (≈3.5 eV) and close to that of prominent ferroelectric semiconducting BiFeO 3 (≈2.67 eV) . Further density functional theory calculations confirm the direct band gap feature of 1 (Figure S9), which is beneficial for the electronic transition under light illumination.…”
Section: Figurementioning
confidence: 58%
“…As depicted in Figure a, 1 exhibits an absorption cut‐off at 460 nm, and its band gap is estimated as 2.70 eV, based on the Tauc equation, indicating that visible light and ultraviolet light can be absorbed by 1 to generate charge carriers and result in an interesting photoelectric effect. The band gap is narrower than those of the most studied ferroelectric BaTiO 3 (≈3.2 eV), LiNbO 3 (≈3.78 eV), and Pb(Zr,Ti)O 3 (≈3.5 eV) and close to that of prominent ferroelectric semiconducting BiFeO 3 (≈2.67 eV) . Further density functional theory calculations confirm the direct band gap feature of 1 (Figure S9), which is beneficial for the electronic transition under light illumination.…”
Section: Figurementioning
confidence: 58%
“…The typical J–V characteristics of the device were measured with and without X‐ray illumination, as shown in Figure a. The short‐circuit photocurrent density ( J sc ), open circuit voltage ( V oc ) of the repaired 10 and 20 times device were calculated to be 19.2 pA cm −2 , 0.54 V and 27.1 pA cm −2 , 0.55 V . Compared with the dark current at 0 V, the light current increases by more than 3–4 times, indicating the excellent sensitivity of the device.…”
Section: Comparison Of the Relevant Device Parameters Of The X‐ray Dementioning
confidence: 99%
“…That is, without an external source, a controllable power supply can be expected in BPVE-active ferroelectrics, which offers an avenue for assembling the newly-conceptual self-driven photodetector devices 8 , 9 . The ferroelectric based self-driven photodetector don’t need complicated interface engineering and fabrication process, and spontaneous polarization in ferroelectrics can be modified by electrical field, offering multiple electrically tunable functionalities 5 , 10 . Currently, the mainstream of ferroelectric oxides still suffer from wide bandgap ( E g ), such as BaTiO 3 (~3.2 eV), LiNbO 3 (~3.6 eV), BiFeO 3 (~2.7 eV), and Pb(Zr,Ti)O 3 (~3.6 eV); this suggests only 8–20% of solar spectrum can be absorbed, greatly hindering their broadband device applications 11 .…”
Section: Introductionmentioning
confidence: 99%