Self-consistent simulation of quantum wires in periodic heterojunction structures

Kerkhoven, Thomas; Raschke, M.; Ravaioli, Umberto

doi:10.1063/1.354921

Cited by 23 publications

(9 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the last two decades, several computer-simulation programs have been written with the aim of finding the potential and mobile charge density distribution in conventional devices [2][3][4][5][6], Ravailoli et al [7] and Kerkhoven et al [8,9] have reported self-consistent computations of the electronic states of a quantum wire while Kumar et al [10][11][12] have presented self-consistent numerical solutions of the Poisson and Schrödinger equations for a GaAs-Al x Ga 1−x As quantum dot. Kerkhoven et al [8,9] work is for two-dimensional (2D) devices.…”

Section: Introductionmentioning

confidence: 98%

See 1 more Smart Citation

Numerical modeling of silicon quantum dots

Udipi

Vasileska

Ferry

1996

Superlattices and Microstructures

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 98%

“…Kerkhoven et al [8,9] work is for two-dimensional (2D) devices. Kumar et al [11], working in three dimensions (3D), use a Newton loop for the Poisson equation with a polynomial preconditioned conjugate gradient method or the Lanczos method for the solution of the Hermitian matrix system.…”

Section: Introductionmentioning

confidence: 99%

Numerical modeling of silicon quantum dots

Udipi

Vasileska

Ferry

1996

Superlattices and Microstructures

View full text Add to dashboard Cite

“…This procedure must be repeated until convergence is reached. Due to the strong nonlinear coupling between both equations, a straightforward iteration by itself does not guarantee convergence, and more sophisticated approaches must be employed [40][41][42].…”

Section: Numerical Strategymentioning

confidence: 99%

Quantum dot electronic devices: modeling and simulation

Sousa

Freire²,

Silva

2004

phys. stat. sol. (c)

View full text Add to dashboard Cite

In this paper, we will review the basic electronic and transport properties of quantum confined structures, discuss the ingredients for the simulation of quantum dot (QD) based electronic devices, and take a closer look at QD based non-volatile flash memories, which became one of the most promising technologies for ultra-dense memory applications, where the quantum tunneling of confined electrons in and out of QDs is the key mechanism for write/erase operations.Despite the concerns on how quantum effects will influence the future of solid-state electronics, the physics of low-dimensional structures is exciting and offers unlimited possibilities. Among several approaches to the development of newer quantum devices, the one based on quantum dots is particularly attractive because the possibility of tailoring their electronic structure by manipulating their shape, size and charge states. Due to these features, QDs are considered one of the building blocks of futuristic applications of nanotechnology. So far, the most attractive possibilities can be separated in two categories: (i) light-emitting/detecting devices and (ii) single-(few) electron transistors. In the first category, the discrete density of states can be tunned to emit and/or detect light in the range between infrared and ultra-violet. These features were confirmed even for nanostructured silicon, which is known for its indirect band gap, but demonstrated light-emitting capabilities [7][8][9]. As for single-electron transistors, they are potential candidates for implementing ultra-dense logic and memory applications [10][11][12][13][14].The goal of this work is to briefly review the theoretical and computational backgrounds of developing tools for the analysis and optimization of semiconductor devices where quantum effects are important. In addition, a brief analysis of Si/SiO 2 QD based non-volatile flash memories will be addressed.

show abstract

“…The one-dimensional electron distribution, nSID, may be calculated by solving the twodimensional Poisson's (1) and Shrodinger's (7) equations self-consistently [6,7],…”

Section: A 1-d Electron Gasmentioning

confidence: 99%

<title>Analysis of quantum-wire MODFETs employing coupled well channels</title>

Heller¹,

Islam

Zhao³

et al. 1998

SPIE Proceedings

View full text Add to dashboard Cite

A novel coupled well structure for implementing a quantum wire MODFET is proposed and analyzed. A thin barrier layer is placed adjacent to the standard modulation doped heterointerface, resulting in a coupled quantum well region. Varying the distance between the barrier and the interface provides a means of controlling the location and distribution of the two-dimensional electron gas. Further confinement of the carriers to one-dimension is obtained by methods known in the literature, such as mesa etching and regrowth. It has been found that the peak of the electron distribution for the first confined state, as measured from the modulation doped interface, changes dramatically depending on the location of the thin barrier. The peak can be shifted as much as 45 A for a change in the barrier location of only 20 A. Implications of this are included in the charge control model, from which the current-voltage (Id-Vd, Id-Vg) and transconductance (gm-Vg) characteristics are obtained. Additionally, the frequency responses (fTVg) of several variations of this device are presented.

show abstract

Self-consistent simulation of quantum wires in periodic heterojunction structures

Cited by 23 publications

References 14 publications

Numerical modeling of silicon quantum dots

Numerical modeling of silicon quantum dots

Quantum dot electronic devices: modeling and simulation

<title>Analysis of quantum-wire MODFETs employing coupled well channels</title>

Contact Info

Product

Resources

About