Numerical modeling of silicon quantum dots

Chalcogenides-based quantum dots: Optical investigation using first-principles calculations

“…Consequently, fluctuations of the QDs potential appear. Our calculated QDs potential values are in accordance with other data [10]. It is mentioned that the variation of the QDs potential is an indication of the electron tunnels the quantum dot.…”

“…The quantum dot sample showed a higher density of the QD-E4 defect and a lower density of QD-E3, while the QD-EL2 defect seems to be unaffected by electron irradiation. However, Udipi et al [10] have presented semiclassical simulation results for the potential energy profile and electron density distribution in 200 nm silicon quantum dot. For the solution of the continuity equation, the efficient difference approximations proposed by Scharfetter and Gummel [11] have extended to three dimensions.…”

Optical Properties of Si Quantum Dot Potential under Pressure Effect

“…Udipi et al [7] presented semiclassical simulation results for the potential energy profile and electron density distribution in a 200 nm silicon quantum dot. For the solution of the continuity equation, the efficient difference approximations, proposed by Scharfetter and Gummel [8] extended to three dimensions.…”