Self-consistent 2-D model for quantum effects in n-MOS transistors

Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study

“…This is complemented by a pronounced threshold voltage lowering [4], [8] associated with current percolation through valleys in the potential distribution at the interface due to the random position of dopants. At the same time the increase in doping concentration to above cm , and the reduction in the oxide thickness to below 3 nm in sub-100 nm MOSFETs [5], result in a large surface electric field, even near threshold, and strong quantization in the direction perpendicular to the channel [9]- [11], with a corresponding increase in threshold voltage, and reduction in gate capacitance and drive [12]- [15].…”

Two-dimensional quantum mechanical modeling of nanotransistors

“…The NEGF approach has been quite successful in modeling steady state transport in a wide variety of one dimensional (1D) semiconductor structures. 20,21 A number of groups have started developing theory and simulation for fully quantum mechanical two dimensional simulation of MOSFETs using the: real space approach, [22][23][24] k-space approach, 25 Wigner function approach, 26 and non equilibrium Green's function approach. 13,27,28 Others groups have taken a hybrid approach using the Monte Carlo method.…”

Subband decomposition approach for the simulation of quantum electron transport in nanostructures

“…However, a better choice for the initial guess consists to account for the confinement of the electron gas in the z direction using the v i (z;x) functions [36]. The electron density of this hybrid model is written as…”