Carbon nanotubes (CNTs) are amongst the most explored one-dimensional nanostructures and have attracted tremendous interest from fundamental science and technological perspectives. Albeit topologically simple, they exhibit a rich variety of intriguing electronic properties, such as metallic and semiconducting behaviour. Furthermore, these structures are atomically precise, meaning that each carbon atom is still three-fold coordinated without any dangling bonds. CNTs have been used in many laboratories to build prototype nanodevices. These devices include metallic wires, field-effect transistors, electromechanical sensors and displays. They potentially form the basis of future all-carbon electronics.This review deals with the building blocks of understanding the device physics of CNTbased nanodevices. There are many features that make CNTs different from traditional materials, including chirality-dependent electronic properties, the one-dimensional nature of electrostatic screening and the presence of several direct bandgaps. Understanding these novel properties and their impact on devices is crucial in the development and evolution of CNT applications.

We use a simple picture based on the π electron approximation to study the bandgap variation of carbon nanotubes with uniaxial and torsional strain. We find (i) that the magnitude of slope of bandgap versus strain has an almost universal behaviour that depends on the chiral angle, (ii) that the sign of slope depends on the value of (n − m) mod 3 and (iii) a novel change in sign of the slope of bandgap versus uniaxial strain arising from a change in the value of the quantum number corresponding to the minimum bandgap. Four orbital calculations are also presented to show that the π orbital results are valid.Typeset using REVT E X 1-1

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In nature, electrical signalling occurs with ions and protons, rather than electrons. Artificial devices that can control and monitor ionic and protonic currents are thus an ideal means for interfacing with biological systems. Here we report the first demonstration of a biopolymer protonic field-effect transistor with proton-transparent PdH x contacts. In maleic-chitosan nanofibres, the flow of protonic current is turned on or off by an electrostatic potential applied to a gate electrode. The protons move along the hydrated maleic-chitosan hydrogen-bond network with a mobility of ~4. . This study introduces a new class of biocompatible solid-state devices, which can control and monitor the flow of protonic current. This represents a step towards bionanoprotonics.

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Proton conduction is essential in biological systems. Oxidative phosphorylation in mitochondria, proton pumping in bacteriorhodopsin, and uncoupling membrane potentials by the antibiotic Gramicidin are examples. In these systems, H+ hop along chains of hydrogen bonds between water molecules and hydrophilic residues – proton wires. These wires also support the transport of OH− as proton holes. Discriminating between H+ and OH− transport has been elusive. Here, H+ and OH− transport is achieved in polysaccharide- based proton wires and devices. A H+- OH− junction with rectifying behaviour and H+-type and OH−-type complementary field effect transistors are demonstrated. We describe these devices with a model that relates H+ and OH− to electron and hole transport in semiconductors. In turn, the model developed for these devices may provide additional insights into proton conduction in biological systems.

Utilizing sp3d5s* tight-binding band structure and wave functions for electrons and holes we show that acoustic phonon limited hole mobility in [110] grown silicon nanowires (SiNWs) is greater than electron mobility. The room temperature acoustically limited hole mobility for the SiNWs considered can be as high as 2500 cm2/V s, which is nearly three times larger than the bulk acoustically limited silicon hole mobility. It is also shown that the electron and hole mobility for [110] grown SiNWs exceed those of similar diameter [100] SiNWs, with nearly 2 orders of magnitude difference for hole mobility. Since small diameter SiNWs have been seen to grow primarily along the [110] direction, results strongly suggest that these SiNWs may be useful in future electronics. Our results are also relevant to recent experiments measuring SiNW mobility.