Modeling of Nanoscale Devices

Anantram, M. P.; Lundstrom, Mark; Nikonov, Dmitri E.

doi:10.1109/jproc.2008.927355

Cited by 283 publications

(181 citation statements)

References 21 publications

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“…In this section we first briefly restate the main equations of the NEGF method necessary for understanding the results. For a more detailed presentation see [31,37]. Then we apply it to the case of a spinFET with spin scattering.…”

Section: Numerical Modelmentioning

confidence: 99%

Simulation of spin field effect transistors: Effects of tunneling and spin relaxation on performance

Gao

Low

Lundstrom

et al. 2010

Journal of Applied Physics

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A numerical simulation of spin-dependent quantum transport for a spin field effect transistor (spinFET) is implemented in a widely used simulator nanoMOS. This method includes the effect of both spin relaxation in the channel and the tunneling barrier between the source/drain and the channel. Account for these factors permits setting more realistic performance limits for the transistor, especially the magnetoresistance, which is found to be lower compared to earlier predictions. The interplay between tunneling and spin relaxation is elucidated by numerical simulation. Insertion of the tunneling barrier leads to an increased magnetoresistance. Numerical simulations are used to explore the tunneling barrier design issues.

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Section: Numerical Modelmentioning

confidence: 99%

Simulation of spin field effect transistors: Effects of tunneling and spin relaxation on performance

Gao

Low

Lundstrom

et al. 2010

Journal of Applied Physics

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“…It can be expressed asΣ r α =τ D,αĝατα,D whereτ is the hopping matrix that couples the device to the leads.ĝ α are the surface Green's functions of the uncoupled leads, i.e., the left or right semi-infinite electrodes. The surface Green's functions and the device Green's functions are calculated using the fast iterative scheme [33] and the recursive algorithm [34], respectively.…”

Section: Model and Formulationmentioning

confidence: 99%

Controllable spin-dependent transport in armchair graphene nanoribbon structures

Nguyễn

Bournel

et al. 2009

Journal of Applied Physics

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Using the non-equilibrium Green's functions formalism in a tight binding model, the spindependent transport in armchair graphene nanoribbon (GNR) structures controlled by a ferromagnetic gate is investigated. Beyond the oscillatory behavior of conductance and spin polarization with respect to the barrier height, which can be tuned by the gate voltage, we especially analyze the effect of width-dependent band gap and the nature of contacts. The oscillation of spin polarization in the GNRs with a large band gap is strong in comparison with 2D-graphene structures. Very high spin polarization (close to 100%) is observed in normal-conductor/graphene/normal-conductor junctions. Moreover, we find that the difference of electronic structure between normal conductor and graphene generates confined states in the device which have a strong influence on the transport quantities. It suggests that the device should be carefully designed to obtain high controllability of spin current.

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“…Modeling approaches for such novel devices [8] are based on (i) computationally intensive, quantum-theory-based non-equilibrium Green's function (NEGF) approaches [9,10] or (ii) simpler semi-classical approaches [11][12][13][14][15][16][17][18]. NEGF-based approaches are highly accurate but extremely time consuming.…”

Section: Introductionmentioning

confidence: 99%

Semi-analytical model for schottky-barrier carbon nanotube and graphene nanoribbon transistors

Yang

Fiori

Iannaccone

et al. 2010

Proceedings of the 20th Symposium on Great Lakes Symposium on VLSI

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This paper describes a physics-based semi-analytical model for Schottky-barrier carbon nanotube (CNT) and graphene nanoribbon (GNR) transistors. The model includes the treatment of (i) both tunneling and thermionic currents, (ii) ambipolar conduction, i.e., both electron and hole current components, (iii) ballistic transport, and (iv) multi-band propagation. Further, it reduces the computational complexity in the two critical and time-consuming steps, namely the calculation of the tunneling probability and the selfconsistent evaluation of the the surface potential in the channel. When validated against NanoTCAD ViDES, a quantum transport simulation framework based on the non-equilibrium Green's function method, it is several orders of magnitude faster without significant loss in accuracy. Since the model is physics-based, it is parameterizable and can be used to study the effect of common parametric variations in CNT diameter and GNR width, Schottkybarrier height, and insulator thickness.

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Modeling of Nanoscale Devices

Cited by 283 publications

References 21 publications

Simulation of spin field effect transistors: Effects of tunneling and spin relaxation on performance

Simulation of spin field effect transistors: Effects of tunneling and spin relaxation on performance

Controllable spin-dependent transport in armchair graphene nanoribbon structures

Semi-analytical model for schottky-barrier carbon nanotube and graphene nanoribbon transistors

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