Abstract-Intrinsic parameter fluctuations introduced by discreteness of charge and matter will play an increasingly important role when semiconductor devices are scaled to decananometer and nanometer dimensions in next-generation integrated circuits and systems. In this paper, we review the analytical and the numerical simulation techniques used to study and predict such intrinsic parameters fluctuations. We consider random discrete dopants, trapped charges, atomic-scale interface roughness, and line edge roughness as sources of intrinsic parameter fluctuations. The presented theoretical approach based on Green's functions is restricted to the case of random discrete charges. The numerical simulation approaches based on the drift diffusion approximation with density gradient quantum corrections covers all of the listed sources of fluctuations. The results show that the intrinsic fluctuations in conventional MOSFETs, and later in double gate architectures, will reach levels that will affect the yield and the functionality of the next generation analog and digital circuits unless appropriate changes to the design are made. The future challenges that have to be addressed in order to improve the accuracy and the predictive power of the intrinsic fluctuation simulations are also discussed.
We extend to more than one spatial dimension the semiclassical full-wave vector Maxwell-Bloch equations for the purpose of achieving an adequate and rigorous description of ultrashort pulse propagation in optical waveguides containing resonant nonlinearities. Our considerations are based on the generalized pseudospin formalism introduced by Hioe and Eberly ͓Phys. Rev. Lett. 47, 838 ͑1981͔͒ for treatment of the resonant coherent interactions of ultrashort light pulses with discrete-multilevel systems. A self-consistent set of coupled curl Maxwell-pseudospin equations in two spatial dimensions and time for the special case of a degenerate three-level system of quantum absorbers is originally derived. Maxwell's curl equations are considered to be coupled via macroscopic medium polarization to the three-level atom model for the resonant medium. Two distinct sets of pseudospin equations are obtained corresponding to the TE-and TM-polarized optical waves. For the case of TM polarization, the electromagnetic wave is polarized in a general direction in the plane of incidence inducing two dipole transitions in a degenerate three-level system by each E-field component along the propagation axis and in transverse direction. We introduce a dipole-coupling interaction Hamiltonian allowing Rabi flopping of the population difference along and perpendicular to the propagation axis with frequencies depending on the corresponding field components. The relationship between the induced polarization and the state vector components that describe the evolution of the discrete-level system is derived in order to couple the quantum system equations to the Maxwell's curl equations. The pseudospin equations are phenomenologically extended to include relaxation effects by introducing nonuniform decay times corresponding to the various dipole transitions occurring in a three-level system. The system has been discretized using finite differences on a Yee grid and solved numerically by an iterative predictor-corrector finite-difference time-domain method. Self-induced transparency soliton propagation through a degenerate three-level quantum system of absorbers in two spatial dimensions and time is demonstrated in planar parallel-mirror waveguide geometries.
Nonlinear polaritons in microcavity wires are demonstrated to exhibit multi-stable behavior and rich dynamics, including filamentation and soliton formation. We find that the multi-stability originates from co-existence of different transverse cavity modes. Modulational stability and conditions for multi-mode polariton solitons are studied. Soliton propagation in tilted, relative to the pump momentum, microcavity wires is demonstrated, and a critical tilt angle for the soliton propagation is found.
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