Self-assembly of octadecyltrichlorosilane monolayers on silicon-based substrates by chemical vapor deposition

Dong, Jinsheng; Wang, Anfeng; Ng, Koon‐Kwan; Mao, Guangzhao

doi:10.1016/j.tsf.2006.07.041

Cited by 86 publications

(74 citation statements)

References 43 publications

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“…After OTS deposition, a film is formed on the titanium surface, making it highly hydrophobic with a contact angle θ = 105°, as shown in Fig. 1(b), which is typical for an OTS covered surface [11], [13]. Atomic-force microscopy (AFM), showed no significant difference in the surface roughness of the titanium surface before and after OTS deposition.…”

Section: A Ots Solution Preparation and Depositionmentioning

confidence: 96%

An Ultrathin Organic Insulator for Metal–Insulator–Metal Diodes

Etor

Dodd

Wood

et al. 2016

IEEE Trans. Electron Devices

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Additional information: Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. > REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) <1  Abstract-The design and fabrication metal-insulator-metal (MIM) diodes using an ultra-thin organic insulator is presented. The insulating layer was found to be compact, highly conformal, and uniform, effectively overcoming the main design challenge in MIM diodes. The diodes have strong non-linear current-voltage characteristics with a typical zero-bias curvature coefficient 5.4 V -1 and a voltage responsivity of 1.9 kV/W at a frequency of 1 GHz. The fabrication of the diodes only requires lowtemperature processing, is cost effective, and can potentially be ported to large-area roll-to-roll manufacturing.Index Terms-Metal-insulator-metal diodes, microwave diode, molecular electronics, octadecyltrichlorosilane.

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Section: A Ots Solution Preparation and Depositionmentioning

confidence: 96%

An Ultrathin Organic Insulator for Metal–Insulator–Metal Diodes

Etor

Dodd

Wood

et al. 2016

IEEE Trans. Electron Devices

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“…3a-d. The spectra demonstrate the various C-H stretching vibrations at 2,924 cm -1 for anti-symmetry stretching and 2851 cm -1 for symmetry stretching [12]. These C-H groups are from the alkyl chain of hydrophobic-inducing agent, i.e., the OTS and CTMS.…”

Section: Physical Properties Of Catalystsmentioning

confidence: 96%

Alkylsilylated Gold Loaded Magnesium Oxide Aerogel Catalyst in the Oxidation of Styrene

2009

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Aerogel-prepared magnesium oxide (A-MgO) was modified by attachment of gold particles. Subsequent modification of its surface with alkylsilylation of n-octadecyltrichlorosilane and chlorotrimethylsilane exhibits a high catalytic activity for oxidation of styrene with tert-butyl hydroperoxide in liquid phase. Catalytic results show that the introduction of gold on the surface of A-MgO gives a higher catalytic activity in styrene oxidation compared to titanium dioxide. The effect of surface modification of A-MgO was studied with XRD, UV-Vis DR, FTIR and nitrogen adsorption analysis.

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“…[16] SAMs are usually prepared from solution or by vapor deposition. [17] Both routes may be applied for coating samples of arbitrary shapes with the same capabilities. [18] However, those from the solution route can be achieved by simple beaker chemistry.…”

Section: Introductionmentioning

confidence: 99%

Octadecyltrichlorosilane (OTS): a resist for OMCVD gold nanoparticle growth

Rezaee

Davidson

Manifar

et al. 2009

Surface & Interface Analysis

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One application of octadecyltrichlorosilane (OTS) self-assembled monolayers (SAMs) is its use as thin film resists. In this work, we demonstrated that OTS SAMs can be reliable resists for organo-metallic chemical vapor deposition (OMCVD) grown gold nanoparticles (Au NPs). In optical sensing applications based on Au NPs, one candidate system consists of patterned OTS SAMs and precisely grown OMCVD Au NPs for achieving a high sensitivity. As an initial step, the OTS SAMs need to perfectly resist the OMCVD Au NP growth. Hence the optimized formation of the OTS SAMs affected by different assembly times and baking temperatures was studied by contact angle, ellipsometry, XPS, SEM, and atomic force microscopy (AFM). To demonstrate the ability of the OTS SAMs to resist OMCVD Au NP growth, the OMCVD process was carried out on two sets of samples: OTS SAMs fabricated under optimized conditions on one set and the other set without OTS SAMs. High-resolution XPS, RBS, SEM, and ultraviolet-visible (UV-Vis) spectroscopy were applied to study the growth of Au NPs on the samples with and without OTS SAM resists.

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Self-assembly of octadecyltrichlorosilane monolayers on silicon-based substrates by chemical vapor deposition

Cited by 86 publications

References 43 publications

An Ultrathin Organic Insulator for Metal–Insulator–Metal Diodes

An Ultrathin Organic Insulator for Metal–Insulator–Metal Diodes

Alkylsilylated Gold Loaded Magnesium Oxide Aerogel Catalyst in the Oxidation of Styrene

Octadecyltrichlorosilane (OTS): a resist for OMCVD gold nanoparticle growth

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