An Ultrathin Organic Insulator for Metal–Insulator–Metal Diodes

Abstract

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High-performance rectifiers fabricated on a flexible substrate

“…2), which is also consistent with our previous results, 6 and is considerably smaller than the values reported in the literature (typically in the MΩ regime). 23 The relatively small resistance associated with the diodes is attributed to the very thin OTS layer (~2 nm), as the resistance of MIM structures is significantly influenced by the thickness of the dielectric layer.…”

“…To overcome this problem, we have previously reported the development of a MIM diode in which organometallic molecules self-assemble in an insulating monolayer. 6 The diode used an octadecyltrichlorosilane (OTS) self-assembled monolayer (SAM), which consists of carbon chains strongly packed together with an overall thickness of approximately 2 nm. Due to the nature of self-assembly, a second layer cannot grow on top of the first one, resulting in a uniform thickness over large areas determined by the SAM chemistry.…”

“…The detail fabrication process and OTS deposition can be found elsewhere. 6 In order to improve the Ti film adhesion, the PI surface was activated in an O 2 plasma for 1 minute, with a pressure of 150 mT, an O 2 flow rate of 50 sccm, and an RF power of 75 W.…”

“…To enable RF testing, ten diodes were embedded within a coplanar waveguide with a characteristic impedance of 50 Ω, 6 to minimize unwanted reflections from the layout as well as to reduce radiation losses. RF measurements on the diodes were carried out from 1 MHz to 3 GHz.…”

“…Z IN was then fitted numerically 6 , resulting in a series resistance R S = 34 Ω and a parallel capacitance C P = 2.9 pF.…”