Self-Assembly of Nanostructures on (631)-Oriented GaAs Substrates

López‐López, M.; Cruz‐Hernández, E.; Martínez-Velis, I.; Rojas-Ramírez, J. S.; Ramírez-López, M.; Pulzara-Mora, A.; Hernández-Rosas, J.

doi:10.1063/1.2825122

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“…To sustain the self-organization of the nanostructures, the use of more elaborate structures has been proposed, for example, the introduction of additional stressor layers. 17) This mechanism increases the level of complexity of the heterostructures. Conversely, our approach, was to employ the growth parameters that lead to an ordered surface corrugation and to proceed with the self-organization of the InAs nanostructures.…”

Section: Resultsmentioning

confidence: 99%

Self-ordering of InAs nanostructures on (631)A/B GaAs substrates

Eugenio-López

Mercado-Ornelas

Pallavi

et al. 2018

Jpn. J. Appl. Phys.

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The high order self-organization of quantum dots is demonstrated in the growth of InAs on a GaAs(631)-oriented crystallographic plane. The unidimensional ordering of the quantum dots (QDs) strongly depends on the As flux beam equivalent pressure (P As ) and the cation/anion terminated surface, i.e., A-or B-type GaAs(631). The self-organization of QDs occurs for both surface types along ½ 113, while the QD shape and size distribution were found to be different for the self-assembly on the A-and B-type surfaces. In addition, the experiments showed that any misorientation from the (631) plane, which results from the buffer layer waviness, does not allow a high order of unidimensional arrangements of QDs. The optical properties were studied by photoluminescence spectroscopy, where good correspondence was obtained between the energy transitions and the size of the QDs.

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Section: Resultsmentioning

confidence: 99%