Self-Assembled UV Photodetector Made by Direct Epitaxial GaN Growth on Graphene

Abstract

Hybrid systems based on the combination of crystalline bulk semiconductors with 2D crystals are identified as promising heterogeneous structures for new optoelectronic applications. The direct integration of III-V semiconductors on 2D materials is very attractive to make practical devices but the preservation of the intrinsic properties of the underlying 2D materials remains a challenge. In this work, we study the direct epitaxy of self-organized GaN crystals on graphene. We demonstrate that severe metal-organic chemical vapor deposition growth conditions of GaN (chemically aggressive precursors and high temperatures) are not detrimental to the structural quality and the charge carrier mobility of the graphene base plane. Graphene can therefore be used both as an efficient sensitive material and as a substrate for GaN epitaxy to make a self-assembled UV photodetector. A responsivity as high as 2 A W is measured in the UV-A range without any further postprocessing compared to simple deposition of contact electrodes. Our study opens the way to build new self-assembled 2D/III-V hybrid optoelectronic devices by direct epitaxy.

ZnO‐Based Ultraviolet Photodetectors with Tunable Spectral Responses

“…In 2018, Wang et al fabricated GaN‐based UV photodetectors via metal‐organic chemical vapor deposition (MOCVD) with a low dark current of 1.3 nA at 2 V, while the ratio of photocurrent ( I ph ) to dark current ( I d ) was only 2 . In addition, commercial growth methods of GaN semiconductor, such as MOCVD and molecular beam epitaxy (MBE), are expensive and always require high growth temperatures. In 2018, Sun et al reported a flexible type of SiC nanowire UV detectors with both rise and decay times less than 30 ms .…”

“…In 2018, Wang et al fabricated GaNbased UV photodetectors via metal-organic chemical vapor deposition (MOCVD) with a low dark current of 1.3 nA at 2 V, while the ratio of photocurrent (I ph ) to dark current (I d ) was only 2. [10] In addition, commercial growth methods of GaN semiconductor, such as MOCVD and molecular beam epitaxy (MBE), [11][12][13] are expensive and always require high growth temperatures. In 2018, Sun et al reported a flexible type of SiC nanowire UV detectors with both rise and decay times less than 30 ms. [14] However, such devices exhibited only a extremely tiny photocurrent of 11 pA at 5 V under an illumination density of 10 mW cm À2 , which is particularly susceptible to external interference, limiting the practical applications.…”

A Review CHEMICAL VAPOR DEPOSITION : PROCESS AND APPLICATION

“…Dia melanjutkan untuk menunjukkan proses bebas plasma dengan lebih dari 70 polimer yang berbeda, membuka bidang penelitian baru (98)(99)(100)(101). Proses ini membutuhkan banyak penyetelan, tetapi pada dasarnya merupakan serangkaian langkah sederhana: bahan yang akan dilapisi ditempatkan di dalam ruang vakum yang menentukan ukuran maksimum objek yang dapat dilapisi.Kemudian, bahan pelapis dipanaskan, atau tekanan di sekitarnya dikurangi sampai bahan menguap, baik di dalam ruang vakum atau di daerah yang berdekatan dari mana uap dapat diperkenalkan (102)(103)(104)(105)(106). Di sana, bahan yang ditangguhkan mulai mengendap ke bahan substrat dan membentuk lapisan yang seragam.…”

MOCVD of AlN on epitaxial graphene at extreme temperatures

“…Important applications in the fields of industry, biology, environment, and medicine, become possible as the difficult issues of epitaxial growth and doping of group III nitrides are being successfully resolved by applying various alternative strategies. 3 It is acknowledged that group III nitrides face their next frontier in terms of integration with graphene for the development of flexible optoelectronics, 4 for making practical UV photodetector devices 5 and high-performance deep UV light emitting diodes 6 through direct deposition of AlN and GaN on graphene. For achieving that, fabrication of epitaxial film of 3D material with sp 3 bonding on 2D material with sp 2 bonding must be mastered.…”