MOCVD of AlN on epitaxial graphene at extreme temperatures

Abstract

Appearance of luminescent centers with narrow spectral emission at room temperature in nanometer thin AlN is reported.

Benchmarking various types of partial atomic charges for classical all-atom simulations of metal–organic frameworks

“…We note here that our method can be applied to the studies of coordination complexes, in which bond polarity analysis can help in revealing the effects of ligand caging on the polarizability of electron distribution at ionic bonds. [55][56][57] Besides the charge accuracy, in practice, the combination or the compatibility between van der Waals and electrostatic parameters is also important especially when simulating flexible MOFs. Typically, a MOF contains metal ions and organic linker molecules (e.g.…”

Collective movement and thermal stability of fullerene clusters on the graphene layer

“…41 The result of the study reveals the attachment of Al adatoms to the graphene delivered by the (CH 3 ) 3 Al precursor. The mentioned process is experimentally observed in metal organic chemical vapor deposition (MOCVD) of AlN 42,43 and other compounds. 44 The first principle calculations have been employed to study the stability and electronic properties of silicon-metal clusters.…”

CAD Approach to Control High-Temperature Processes in SiC Technology

“…Generally, they are characterized by larger band gaps, higher melting temperatures, better heat conductivity, a larger electron saturation velocity and greater critical electric field strength. In WBG materials, one can distinguish between the group of technologically-mature semiconductors (SiC and GaN) and the group of promising semiconductors currently under research (Ga 2 O 3 , III-Ns) [1,2].…”