Abstract:Manufacturing silicon carbide semiconductor devices may require high-temperature treatment in closed graphite reactors. This makes temperature control of processed SiC substrates difficult, since their temperature cannot be measured directly. As the monitoring of the SiC sample temperature is critically important for proper process flow, an indirect method involving the use of the CAD approach has been developed. A numerical model of a furnace reactor was created on the basis of the commercial ANSYS package, a… Show more
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