Self-assembled single wall carbon nanotube field effect transistors

Marty, Laëtitia; Naud, Cécile; Chaumont, M.; Bonnot, A.M.; Fournier, Thierry; Bouchiat, Vincent

doi:10.1109/nano.2003.1231760

Cited by 7 publications

(6 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In our process, we perform this template directed growth using a hot-filament-assisted CVD method . [10] The growth parameters are adjusted to reach the limit of an individual carbon nanotube or bundle connection per electrode pair [11]. This technique allows the simultaneous self-assembly and electrical connection during the nanotube synthesis.…”

Section: Cnfet Integration and Functionalizationmentioning

confidence: 99%

Self‐Assembly of Carbon‐Nanotube‐Based Single‐Electron Memories

Marty

Bonnot

Bonhomme

et al. 2005

Small

View full text Add to dashboard Cite

We demonstrate the wafer-scale integration of single electron memories based on carbon nanotube field effect transistors (CNFETs) using a process based entirely on self assembly. First, a "dry" self assembly step based on chemical vapor deposition (CVD) allows the growth and connection of CNFETs. Next, a "wet" self-assembly step is used to attach a single 30 nmdiameter gold bead in the nanotube vicinity via chemical functionalization. The bead is used as the memory storage node while the CNFET operated in the subthreshold regime acts as an electrometer exhibiting exponential gain. Below 60 K, the transfer characteristics of goldCNFETs show highly reproducible hysteretic steps. Evaluation of the capacitance confirms that these current steps originate from the controlled storage of single electrons with a retention time that exceeds 550 s at 4 K.

show abstract

Section: Cnfet Integration and Functionalizationmentioning

confidence: 99%

Self‐Assembly of Carbon‐Nanotube‐Based Single‐Electron Memories

Marty

Bonnot

Bonhomme

et al. 2005

Small

View full text Add to dashboard Cite

show abstract

“…Another key property for a high-performance nonvolatile memory is the speed with which the write and erase operations are executed. To date the operation frequency in CNT-FET memories is reported to be in the order of 10 ms. 7,10 This figure of merit needs to be improved before a SWCNT-FET memory can compete with conventional silicon-based memories with write and erase times of 100 µs. 15 In this Letter we demonstrate a SWCNT-FET memory having write and erase operations with 100 ns long pulses.…”

mentioning

confidence: 99%

“…The high sensitivity of CNT-FETs have been also demonstrated by monitoring single-electron tunneling events between a gold particle and a nearby nanotube . Since the first demonstration of an electromechanical carbon nanotube memory, there have also been reports of CNT-FETs showing memory effects. − While the mobility of these devices is excellent (79000 cm 2 /(V s)), the charge storage stability of at best 14 days for CNT-FET memories leaves room for improvement. Another key property for a high-performance nonvolatile memory is the speed with which the write and erase operations are executed.…”

mentioning

confidence: 99%

“…Having a stable hysteresis loop with well-separated states at zero gate voltage enables us to use this device as a memory element. Similar devices have previously been studied with different gate insulators, device geometries, and varying parameters. − So far these SWCNT-FET memory elements have been subjected to slow write and erase times, the fastest being 10 ms. , The write pulse sent to the backgate is shown in the inset of Figure . The ON and OFF states are separated by more than 2 orders of magnitude and monitored for ∼25 s before switching to the other state.…”

mentioning

confidence: 99%

See 1 more Smart Citation

High-Speed Memory from Carbon Nanotube Field-Effect Transistors with High-κ Gate Dielectric

Rinkiö

Johansson

Paraoanu³

et al. 2009

Nano Lett.

View full text Add to dashboard Cite

We demonstrate 100 ns write/erase speed of single-walled carbon nanotube field-effect transistor (SWCNT-FET) memory elements. With this high operation speed, SWCNT-FET memory elements can compete with state of the art commercial Flash memories in this figure of merit. The endurance of the memory elements is shown to exceed 104 cycles. The SWCNT-FETs have atomic layer deposited hafnium oxide as a gate dielectric, and the devices are passivated by another hafnium oxide layer in order to reduce surface chemistry effects. We discuss a model where the hafnium oxide has defect states situated above, but close in energy to, the band gap of the SWCNT. The fast and efficient charging and discharging of these defects is a likely explanation for the observed operation speed of 100 ns which greatly exceeds the SWCNT-FET memory speeds of 10 ms observed earlier for devices with conventional gate oxides.

show abstract

“…The demonstration of carbon nanotube (CNT) field-effect transistors (FET) 13 14 has opened up the possibility of using CNT in non-volatile memory devices. However, to date, any demonstrated devices, based on static CNT transistors, have limitations of low operation speed 15 16 17 and/or short retention times 18 19 . Such limitations may be overcome by making use of mechanical motion.…”

mentioning

confidence: 99%

A fast and low-power microelectromechanical system-based non-volatile memory device

et al. 2011

View full text Add to dashboard Cite

Several new generation memory devices have been developed to overcome the low performance of conventional silicon-based flash memory. In this study, we demonstrate a novel non-volatile memory design based on the electromechanical motion of a cantilever to provide fast charging and discharging of a floating-gate electrode. The operation is demonstrated by using an electromechanical metal cantilever to charge a floating gate that controls the charge transport through a carbon nanotube field-effect transistor. The set and reset currents are unchanged after more than 11 h constant operation. Over 500 repeated programming and erasing cycles were demonstrated under atmospheric conditions at room temperature without degradation. Multinary bit programming can be achieved by varying the voltage on the cantilever. The operation speed of the device is faster than a conventional flash memory and the power consumption is lower than other memory devices.

show abstract

Self-assembled single wall carbon nanotube field effect transistors

Cited by 7 publications

References 27 publications

Self‐Assembly of Carbon‐Nanotube‐Based Single‐Electron Memories

Self‐Assembly of Carbon‐Nanotube‐Based Single‐Electron Memories

High-Speed Memory from Carbon Nanotube Field-Effect Transistors with High-κ Gate Dielectric

A fast and low-power microelectromechanical system-based non-volatile memory device

Contact Info

Product

Resources

About