Self-alignment processed amorphous silicon ring oscillators

Hiranaka, Kouichi; Yamaguchi, T.; Yanagisawa, S.

doi:10.1109/edl.1984.25897

Cited by 31 publications

(9 citation statements)

References 6 publications

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“…Propagation delay of a ring oscillator (RO) is a widely accepted benchmark of how fast the fieldeffect transistors (FETs) fabricated under a certain design rule can operate. The ROs based on the TFTs with different channel materials, including a-Si:H [9], organic semiconductors [10], and an oxide semiconductor [8], have been reported. In this letter, we present a-IGZO TFT ROs that have much shorter propagation delay than any of these ROs, which is less than half of the a-Si:H TFT RO [9], almost one third of the organic TFT RO [10] and only ∼2% of the previous oxide TFT RO [8].…”

Section: Introductionmentioning

confidence: 99%

Fast Thin-Film Transistor Circuits Based on Amorphous Oxide Semiconductor

Ofuji

Abe

Shimizu

et al. 2007

IEEE Electron Device Lett.

111

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Five-stage ring oscillators (ROs) composed of amorphous In/Ga/Zn/O (a-IGZO) channel thin-film transistors (TFTs) with the channel lengths of 10 µm were fabricated on a glass substrate. The a-IGZO layer was deposited by RF magnetron sputtering onto the unheated substrate. The RO operated at 410 kHz (the propagation delay of 0.24 µs/stage), when supplied with an external voltage of +18 V. This is the fastest integrated circuit based on oxide-semiconductor channel TFTs to date that operates faster than the ROs using conventional hydrogenated amorphous silicon TFTs and organic TFTs.

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Section: Introductionmentioning

confidence: 99%

Fast Thin-Film Transistor Circuits Based on Amorphous Oxide Semiconductor

Ofuji

Abe

Shimizu

et al. 2007

IEEE Electron Device Lett.

111

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“…Second, frequency-dependent measurements 24 (Figure 4d) demonstrate that the gain is greater than unity and phase inversion is achieved when the devices are driven by up to a 50 MHz sine wave supply of 4 V. This is the highest reported operation frequency for a circuit made of any channel material on flexible substrates, outperforming amorphous Si and organic electronics by over 2 orders of magnitude. 32,33 The NW inverter structure can be further improved in the future to obtain higher frequencies by using shorter channel lengths and incorporating thinner gate dielectrics. Third, current vs voltage sweeps recorded on the memory elements (Figure 4e) exhibit large and reproducible hysteresis loops consisting of storage and removal of charge from a floating gate element.…”

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confidence: 99%

Layer-by-Layer Assembly of Nanowires for Three-Dimensional, Multifunctional Electronics

et al. 2007

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We report a general approach for three-dimensional (3D) multifunctional electronics based on the layer-by-layer assembly of nanowire (NW) building blocks. Using germanium/silicon (Ge/Si) core/shell NWs as a representative example, ten vertically stacked layers of multi-NW fieldeffect transistors (FETs) were fabricated. Transport measurements demonstrate that the Ge/Si NW FETs have reproducible high-performance device characteristics within a given device layer, that the FET characteristics are not affected by sequential stacking, and importantly, that uniform performance is achieved in sequential layers 1 through 10 of the 3D structure. Five-layer single-NW FET structures were also prepared by printing Ge/Si NWs from lower density growth substrates, and transport measurements showed similar high-performance characteristics for the FETs in layers 1 and 5. In addition, 3D multifunctional circuitry was demonstrated on plastic substrates with sequential layers of inverter logical gates and floating gate memory elements. Notably, electrical characterization studies show stable writing and erasing of the NW floating gate memory elements and demonstrate signal inversion with larger than unity gain for frequencies up to at least 50 MHz. The ability to assemble reproducibly sequential layers of distinct types of NW-based devices coupled with the breadth of NW building blocks should enable the assembly of increasing complex multilayer and multifunctional 3D electronics in the future.Over the past several years, semiconductor NWs 1,2 and carbon nanotubes 3 have been actively explored as the potential materials for future electronic components. These chemically derived single-crystalline nanostructures present unique advantages over conventional semiconductors, as they enable integration of high-performance device elements onto virtually any substrate 4-6 with scaled on-currents and switching speeds higher than state-of-the-art planar Si structures. 7,8 These unique electrical properties and the intrinsically miniaturized dimensions of NW and carbon nanotube building blocks may facilitate the continuation of Moore's law and the evolutionary quest for ever faster and smaller electronics well into the future. More uniquely, the capability of assembling high-performance NW building blocks with diverse functional properties could enable novel circuit concepts such as 3D integrated electronics, 9 where 3D structure arises from sequential assembly 10-12 of NWs into vertically stacked device layers.Indeed, there has been considerable interest in multilayer electronics, as they offer a more efficient interconnection and processing of digital information. [13][14][15] However, materials-and fabrication-related challenges have presented major obstacles in achieving truly 3D integrated circuits based on the conventional Si CMOS technology, and the need for a new technology remains critical. Here, we report the monolithic integration of individual and parallel arrays of crystalline NWs as multifunctional and multilayer circuits...

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“…Electrical characterization shows the NW -TFT oscillator exhibits a self -sustained stable output voltage oscillation, with a maximum oscillation frequency greater than 10 MHz and stage delay (the time required to transmit the signal through each transistor) on the order of 10 ns (Figures 8c and 8d). 52 Although the ac per form ance of current NW -TFT circuits is still inferior to that of the best reported poly -Si TFT circuits (stage delay, 100-500 ps), 29,53 we believe that further development in NW -TFT technology (by optimizing the nanowire synthesis, assembly, and device fabrication proc ess or using alternative ma te rials) can significantly improve the per form ance of NW -TFT circuits. 52 Although the ac per form ance of current NW -TFT circuits is still inferior to that of the best reported poly -Si TFT circuits (stage delay, 100-500 ps), 29,53 we believe that further development in NW -TFT technology (by optimizing the nanowire synthesis, assembly, and device fabrication proc ess or using alternative ma te rials) can significantly improve the per form ance of NW -TFT circuits.…”

Section: High -Speed Integrated Nw -Tft Circuitsmentioning

confidence: 98%

Assembled Semiconductor Nanowire Thin Films for High-Performance Flexible Macroelectronics

Duan¹

2007

MRS Bull.

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A new concept of macroelectronics using assembled semiconductor nanowire thin films holds the promise of significant performance improvement. In this new concept, a thin film of oriented semiconductor nanowires is used to produce thin-film transistors (TFTs) with conducting channels formed by multiple parallel single-crystal nanowire paths. There fore, charges travel from source to drain within single crystals, ensuring high carrier mobility. Recent studies have shown that high-performance silicon nanowire TFTs and high-frequency circuits can be readily produced on a variety of substrates including glass and plastics using a solution assembly process. The device performance of these nanowire TFTs not only greatly surpasses that of solution-processed organic TFTs, but is also significantly better than that of conventional amorphous or polycrystalline silicon TFTs, approaching single-crystal silicon-based devices. Furthermore, with a similar frame-work, Group III-V or II-VI nanowire or nanoribbon materials of high intrinsic carrier mobility or optical functionality can be assembled into thin films on flexible substrates to enable new multifunctional electronics/optoelectronics that are not possible with traditional macroelectronics. This can have an impact on a broad range of existing applications, from flat-panel displays to image sensor arrays, and enable a new generation of flexible, wearable, or disposable electronics for computing, storage, and wireless communication.

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Self-alignment processed amorphous silicon ring oscillators

Cited by 31 publications

References 6 publications

Fast Thin-Film Transistor Circuits Based on Amorphous Oxide Semiconductor

Fast Thin-Film Transistor Circuits Based on Amorphous Oxide Semiconductor

Layer-by-Layer Assembly of Nanowires for Three-Dimensional, Multifunctional Electronics

Assembled Semiconductor Nanowire Thin Films for High-Performance Flexible Macroelectronics

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