Assembled Semiconductor Nanowire Thin Films for High-Performance Flexible Macroelectronics

Duan, Xiangfeng

doi:10.1557/mrs2007.46

Cited by 69 publications

(65 citation statements)

References 50 publications

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“…Nanoribbons can be synthesized at high temperature with nearly perfect crystalline structure, but manipulated and assembled at room temperature. This flexibility allows the integration of normally incompatible materials and processes and can enable unique functions in electronics or photonics (26)(27)(28)(29)(30). In this report, the dielectric properties of aluminum oxide (Al 2 O 3 ) nanoribbons are explored for graphene-based electronics.…”

mentioning

confidence: 99%

High- κ oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors

Liao¹,

Bai

Qu³

et al. 2010

Proc. Natl. Acad. Sci. U.S.A.

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Deposition of high-κ dielectrics onto graphene is of significant challenge due to the difficulties of nucleating high quality oxide on pristine graphene without introducing defects into the monolayer of carbon lattice. Previous efforts to deposit high-κ dielectrics on graphene often resulted in significant degradation in carrier mobility. Here we report an entirely new strategy to integrate high quality high-κ dielectrics with graphene by first synthesizing freestanding high-κ oxide nanoribbons at high temperature and then transferring them onto graphene at room temperature. We show that single crystalline Al 2 O 3 nanoribbons can be synthesized with excellent dielectric properties. Using such nanoribbons as the gate dielectrics, we have demonstrated top-gated graphene transistors with the highest carrier mobility (up to 23,600 cm 2 ∕V · s) reported to date, and a more than 10-fold increase in transconductance compared to the back-gated devices. This method opens a new avenue to integrate high-κ dielectrics on graphene with the preservation of the pristine nature of graphene and high carrier mobility, representing an important step forward to high-performance graphene electronics.graphene dielectric integration | carrier mobility | dielectric nanoribbon | nanoelectronics G raphene has attracted considerable interest as a potential electronic material due to its exceptionally high carrier mobility and tunable band gap (1-6). Various strategies have been explored to fabricate field-effect transistors based on graphene or graphene nanostructures (6-13). Most of these efforts to date employ a silicon substrate as a global back gate and silicon oxide as the gate dielectric, which have led to many interesting scientific discoveries, but will be of limited use for practical applications due to the high-gate switching voltage required and the inability to independently address individual devices on the same chip. Top-gated devices with high-κ dielectrics can significantly reduce the required switching voltage and readily allow independently addressable device arrays and functional circuits, and therefore are of significant interest (14, 15).The gate dielectric is an essential component of a transistor, which can significantly impact the critical device parameters including transconductance, subthreshold swing and frequency response. Exploring graphene for future electronics requires effective integration of high quality gate dielectrics, in particular the high-κ dielectrics. However, it has been rather challenging to deposit oxide dielectrics onto graphene without introducing defects. The deposition of high-κ dielectrics is usually achieved using atomic layer deposition (ALD), which requires reactive surface groups (16)(17)(18)(19)(20). Functionalization of graphene surface for ALD either introduces undesired impurities or breaks the chemical bonds in the graphene lattice, inevitably leading to a significant degradation in carrier mobilities (20). Physical vapor deposition (PVD) such as electron-beam evaporation or sput...

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mentioning

confidence: 99%

High- κ oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors

Liao¹,

Bai

Qu³

et al. 2010

Proc. Natl. Acad. Sci. U.S.A.

Self Cite

194

158

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“…All these properties make it an interesting material for potential applications in a wide range of fields, such as optics, electronics, optoelectronics, chemical sensors, renewable energy, lithium ion battery and biology. One-dimensional silicon nanostructures have been broadly explored for nanoscale electronics, 23,24 flexible large area electronics, [25][26][27][28][29] thermoelectrics, 30 photovoltaics, [31][32][33][34][35] battery electrodes, 36 and biosensors. 37,38 However, they can hardly be used as an optically active material for functional optoelectronics due to the nature of indirect band gap of silicon.…”

Section: Introductionmentioning

confidence: 99%

Silicon Nanowires and Related Nanostructures as Lithium-Ion Battery Anodes

2016

Silicon and Silicide Nanowires

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In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures -single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p-and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery.

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“…57,58 In this approach, the nanowires, which may possess a core -shell structure, including a thin outer layer of high -quality silicon dioxide, are grown in an offl ine reactor. The nanowires are then suspended in a solution and printed onto the substrate.…”

Section: Application Challenges: Tft Devices and Circuits Introductiomentioning

confidence: 99%

“…Other semiconductor nanowire devices, including those fabricated from GaAs, InP, and CdS via the same approach, have been reported. 58 A detailed discussion of nanowire structures and synthesis, as well as their use in fabrication of electronic devices, will be given in Chapters 10 and 11 .…”

Section: Application Challenges: Tft Devices and Circuits Introductiomentioning

confidence: 99%

Introduction to Solution‐Deposited Inorganic Electronics

Reuss¹,

Chalamala

2008

Solution Processing of Inorganic Materials

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Assembled Semiconductor Nanowire Thin Films for High-Performance Flexible Macroelectronics

Cited by 69 publications

References 50 publications

High- κ oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors

High- κ oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors

Silicon Nanowires and Related Nanostructures as Lithium-Ion Battery Anodes

Introduction to Solution‐Deposited Inorganic Electronics

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