Selectorless resistive switching memory: Non-uniform dielectric architecture and seasoning effect for low power array applications

Abstract

In this work, the nonlinear (NL) characteristics of bi-layer high-k/low-k dielectrics structure, i.e. high-k layer with the low-k layer, are for selectorless oxide-based resistive random-access memories (RRAM) memory array application. It has been shown that such structure enhances the read currents at full read voltage (∼10-3 A) as compared to the bi-layer low-k/low-k structure (∼10-4 A), reduces low-voltage current, increases I-V nonlinearity and thereby suppresses the sneak path currents in the selectorless RRAM. Improved seasoning effect has also been demonstrated using the bilayer dielectric structure. The Fowler-Nordheim tunneling behavior has been found in the first RESET process (-0.45 to -1.25 V) as followed by the high self-rectifying characteristics that enlarge the immunity to the sneak path current and reduce the read errors in the array applications. The breakdown controllability of the forming process dominates the followed seasoning cycles which leads to two different performances in bilayer stacks i.e. efficient seasoning and inefficient seasoning, which provides an intrinsic design of selectorless RRAM devices. The device characteristics with current transport mechanisms have also been investigated. Our results provide additional insights into ways to achieve high performance and excellent reliability of built-in nonlinearity in selectorless RRAM (NL > 120, memory window > 100, sub-μs switching speed, and NL retention) for the future low-power RRAM memory array configurations.

Nano Helical-Shaped Dual-Functional Resistive Memory for Low-Power Crossbar Array Application

“…After excluding the other current transport mechanisms such as the Pool−Frenkel emission, Schottky emission, thermionic emissions, etc., an Ohmic emission and spacecharge-limited current (SCLC) are concluded, respectively. 28,29 The R 2 values for the low-voltage and high-voltage regions at applied biases of 5, 7, and 9 V are greater than 0.99, which confirmed the valid fitting results with the coefficient of determination. The space-charge-limited current of three bias conditions are shown in the I−V characteristics, which shows that there is no bias dependence on current transport models in the helical selection devices.…”

Aloe Vera-Inspired Cognitive Computing: Unveiling the Power of Pavlovian Conditioning and Pattern Recognition with a Synaptic RRAM Device

“…Indeed, there have been various models to understand the charge transport and RS phenomena in RRAM devices. These models include ln I α ln V [space-charge-limited conduction (SCLC) mechanism], I n .25em I V α 1 V (Fowler Nordheim tunneling), I n .25em I V α V (Poole–Frenkel Emission), and ln I α V (Schottky emission) . To determine the underlying physics that is responsible for switching characteristics in aloe vera-based RRAM, the high-resistance state (HRS) and low-resistance state (LRS) of I – V curves are plotted in the log–log scale shown in Figure c and d. The linear fitting implies that the current in the HRS follows the trap-controlled SCLC, and the current transport in the LRS is dominated by the ohmic conduction.…”

Self-Selective Dielectric-Fuse Effect with Ambient Factors in Oxide-Based Memory

“…Noted the benchmark for various types of OTP can be found in prior report. 38 Compared to ReRAM devices with the microstructure before and after dielectric fusing occurs (Figs. 3a-3b), the via-fusing was observed to induce complex protrusion with lighter regions on the Pt surface.…”