Self-Selective Dielectric-Fuse Effect with Ambient Factors in Oxide-Based Memory

Abstract

A dual-function memory with complementary metal oxide semiconductor (CMOS) compatibility is presented with the feasibility of future embedded applications. The self-selective memory composed of bilayer oxide stacks is presented with the immunity of sneak-path current and improved thermal stability for the high storage class memory array application. Meanwhile, the one-time programmable memory is realized by the identical bilayer structure which has improved the yield of dielectric-fuse phenomena by increasing the operating temperature up to 423 K. The physical mechanisms and modeling are investigated with experimental and simulated results. Our results provide pathfinding of high density, CMOS back-end-of-line integration capability, land ow power multi-functionality in the future embedded applications.