Selective Tungsten CVD in a Hot Walled Reactor by Silane Reduction of  WF 6

Gorczyca, Thomas; Douglas, Leonard; Gorowitz, B.; Wilson, R. H.

doi:10.1149/1.2097591

Cited by 7 publications

(3 citation statements)

References 2 publications

(2 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The existence of a nucleation barrier has been observed in related systems such as tungsten CVD from the precursor WF 6 . [36][37][38] C. Film stoichiometry XPS reveals the presence of boron oxide ͓Fig. 6͑a͔͒ and hafnium oxide ͓Fig.…”

Section: B Temperature Programmed Reactionmentioning

confidence: 99%

Hafnium diboride thin films by chemical vapor deposition from a single source precursor

Jayaraman

Yang

Kim

et al. 2005

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

High quality, stoichiometric thin films of hafnium diboride are deposited by chemical vapor deposition from the precursor Hf͓BH 4 ͔ 4 at deposition temperatures as low as 200°C. An activation energy of 0.43 eV͑41 kJ/ mol͒ is obtained for the overall process as monitored by temperature programmed reaction studies. Films deposited at low temperatures ͑Ͻ500°C͒ are structurally amorphous to x-ray diffraction; a 12 nm thick film is sufficient to prevent copper diffusion into silicon during a 600°C anneal for 30 min. Films deposited above 500°C are crystalline, but have a columnar microstructure with low density. All the films are metallic, but the low temperature amorphous films have the lowest resistivity ϳ440 ⍀ cm. The process is also highly conformal, e.g., a 65 nm wide trench with a 19:1 depth-width aspect ratio was coated uniformly.

show abstract

Section: B Temperature Programmed Reactionmentioning

confidence: 99%

Hafnium diboride thin films by chemical vapor deposition from a single source precursor

Jayaraman

Yang

Kim

et al. 2005

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

show abstract

“…Mo-films : Alternative reactant gases Recent information on a low temperature procedure [7] has been used to modify the reactive gas inlet and the substrate mask. According to Wilson et al ( 7] molybdenum could probably be deposited by reacting MoF6 with hydrogen and silane to avoid attack by fluorine on substrate and chamber components.…”

Section: Task 2 Preparation Of Mo and Tin By Pe-cvd Design Of The Pmentioning

confidence: 99%

“…According to Wilson et al ( 7] molybdenum could probably be deposited by reacting MoF6 with hydrogen and silane to avoid attack by fluorine on substrate and chamber components. This procedure has been demonstrated for tungsten deposition, in which case the silane was injected directly on to the substrate surface.…”

Section: Task 2 Preparation Of Mo and Tin By Pe-cvd Design Of The Pmentioning

confidence: 99%

Corrosion-resistant coatings for high-temperature high-sulfur- activity applications. Final report

Selman¹,

Chen

1992

View full text Add to dashboard Cite

Issues and perspectives in multilevel interconnection technology for quarter‐micron generation

Shibata

1995

Electron Comm Jpn Pt II

View full text Add to dashboard Cite

The size of elements in an integrated circuit has been reduced according to the proportional reduction scenario (scaling scenario) which has been essential in achieving high integration and high performance of Si ULSI. In this paper, the issues and perspectives in reducing the dimensions of the interconnections will be reviewed. Then the influence of the RC delay caused by interconnection resistance and capacitance which are expected to be more serious in the quarter‐micron generation on the device performance will be discussed. In addition, a new scaling scenario needed to reduce the interconnection delay in accordance with the improvement of device performance will be proposed. At the same time, a way to improve interconnection reliability in high current density, planarization techniques, and self‐aligned techniques will be discussed.

show abstract

Selective Tungsten CVD in a Hot Walled Reactor by Silane Reduction of WF 6

Abstract: not Available.

Cited by 7 publications

References 2 publications

Hafnium diboride thin films by chemical vapor deposition from a single source precursor

Hafnium diboride thin films by chemical vapor deposition from a single source precursor

Corrosion-resistant coatings for high-temperature high-sulfur- activity applications. Final report

Issues and perspectives in multilevel interconnection technology for quarter‐micron generation

Contact Info

Product

Resources

About