2014
DOI: 10.1039/c4nr01690d
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Selective removal of metallic single-walled carbon nanotubes in full length by organic film-assisted electrical breakdown

Abstract: An organic film-assisted electrical breakdown technique is proposed to selectively remove metallic (m-) single-walled carbon nanotubes (SWNTs) in full length towards creation of pure semiconducting SWNT arrays which are available for the large-scale fabrication of field effect transistors (FETs). The electrical breakdown of horizontally aligned SWNT arrays embedded in organic films resulted in a maximum removal length of 16.4 μm. The removal of SWNTs was confirmed using scanning electron microscopy and Raman m… Show more

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Cited by 35 publications
(43 citation statements)
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“…[59] The other alignment that can be achieved on a substrate is a parallel growth. Much progress has been achieved in the development of this process for demonstrations of selective growth or removal, [70] high-density growth, [71] and etc. [60][61][62][63] In this type of growth, tubes fly along the gas flow, and the catalyst are located at the tips of the SWNTs.…”
Section: Wwwadvancedsciencenewscommentioning
confidence: 99%
“…[59] The other alignment that can be achieved on a substrate is a parallel growth. Much progress has been achieved in the development of this process for demonstrations of selective growth or removal, [70] high-density growth, [71] and etc. [60][61][62][63] In this type of growth, tubes fly along the gas flow, and the catalyst are located at the tips of the SWNTs.…”
Section: Wwwadvancedsciencenewscommentioning
confidence: 99%
“…Purely semiconducting HA‐SWNT FETs can give data with a high ON‐OFF ratio, which translates to a more accurate doping effect observation. Semiconducting HA‐SWNT FETs were achieved by electrically burning off m‐SWNTs with the drain voltage up to V DS = 40 V prior to the measurement . Figure S7 and Table S5 show that the FET transfer characteristics demonstrate unipolar transport properties.…”
Section: Resultsmentioning
confidence: 99%
“…m‐SWNTs were burnt off by ramping the drain voltage from 0 V to a negative value until the drain current became sufficiently small (typically up to V DS = −6 V μm −1 ), while a positive gate voltage ( V GS = 10 V) was applied to turn the s‐SWNTs off …”
Section: Methodsmentioning
confidence: 99%
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“…Due to the presence of metallic tubes, the electrical characteristics (e.g., the on/off ratio and integration uniformity) of the SWNT transistors become poor and uncontrollable. 6 The second strategy consists of direct synthesis using various processes, for example, electrical breakdown, 9 gas-phase etching reactions, 10 ultraviolet irradiation, 11 etc. In general, there are two approaches to separate m-and s-SWNTs.…”
Section: Introductionmentioning
confidence: 99%