Selective High-Throughput TiN Etching Methods

Cooper, Emanuel I.; Rajaram, R.; Payne, Makonnen; Lippy, Steven

doi:10.4028/www.scientific.net/ssp.195.143

Cited by 5 publications

(3 citation statements)

References 4 publications

(3 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…That test and other tests planned are summarized in Table 1. There are also other ways to mitigate the W attack by adding suitable inhibitors [2] and by designing formulations that operate in the passivation region and selectively etch the MHM with minimal attack on the metal contact [3,4]. The level of oxidizers in the MHM removal solution also a plays a crucial role in controlling the selectivity to the W contacts [5].…”

Section: Approachmentioning

confidence: 99%

Developing Integrated Solutions and Wet Cleans to Eliminate Tungsten Contact Attack in Sub 0x nm Nodes

Sehgal

DeVre

Balu

2018

SSP

View full text Add to dashboard Cite

Having successfully developed high volume manufacturing (HVM) processes for the 0x nm node, the semiconductor industry is now engaged in developing the next advanced node. This 0xnm node development is being accomplished by a combination of shrinking 0x nm dimensions, introducing new materials and films and consequently new lithography, dry etch and wet clean processes for the new node. One of the major challenges is developing processes, including BEOL Cleans Steps, to successfully and reliably expose the MOL metal contact during the first metal line formation without degrading the contact itself. One such compatible method/clean is discussed in this study.

show abstract

Section: Approachmentioning

confidence: 99%

Developing Integrated Solutions and Wet Cleans to Eliminate Tungsten Contact Attack in Sub 0x nm Nodes

Sehgal

DeVre

Balu

2018

SSP

View full text Add to dashboard Cite

show abstract

“…In general, a conventional chemical e.g., SC1, SC2 or SPM can meet the purpose of high TiN removal rate, but high selectivities between TiN, dielectric and metals are difficult to achieve [3]. While processes that do not expose some metals, e.g.…”

Section: Introductionmentioning

confidence: 99%

High Throughput Wet Etch Solution for BEOL TiN Removal

Hsu

Wang

et al. 2016

SSP

View full text Add to dashboard Cite

Sub-10 nm technology node manufacturing processes may require the use of thicker and denser TiN hard mask for patterning at the BEOL. The modified TiN, which tends to be more chemically robust, must be removed using a wet etch process, while maintaining typical throughput - no extension of typical wet etch process times. To satisfy these needs, a new TiN etching accelerator was found that enhanced the activity of peroxide-related species in a wet etch chemical formulation that achieved increased TiN etch rate relative to formulation without TiN etch rate accelerator (Sample 1), while also minimizing the damage to ultra-low-k inter layer dielectric (ILD) layer by a strong base, also present in the formulation. We report here the result of a solvent based formulation, which adopted the TiN etching accelerator. The formulation was able to maintain TiN etch rate and remove post-etch residue, while remaining selective to ultra-low-k ILD, Co and Cu. The TiN etch rate of the accelerator enhanced formulation can be further tuned by modifying the process temperature or the hydrogen peroxide to formulation mixing ratio and has the potential capability to process > 400 wafers.

show abstract

“…However, these chemistries often suffer incompatibilities with the metal and/or dielectric films. The challenge associated with TiN hard mask stripping in the presence of W has been reported with the conclusion that low-pH formulations containing oxidizers other than H 2 O 2 can exhibit high etch selectivity toward Cu, W and ILD films (3). Further increasing the difficulty of wet TiN removal is the common use of a TiN barrier layer between the W and the dielectric film, which is often exposed during the stripping and should not be impacted as the TiN MHM is removed.…”

Section: Introductionmentioning

confidence: 99%

TiN Metal Hard Mask Removal with Selectivity to Tungsten and TiN Liner

Lippy¹,

Chen²,

Peethala

et al. 2013

ECS Trans.

View full text Add to dashboard Cite

Low-pH titanium nitride (TiN) removal formulations utilizing oxidizers other than hydrogen peroxide (H 2 O 2 ) have been developed with superior TiN selectivity toward W and the interlevel dielectric (ILD) films. One critical challenge is protecting the TiN barrier layer between the W and dielectric layer, which is often exposed during the TiN metal hard mask (MHM) removal step. This study focused on developing and optimizing formulations with TiN MHM etch rates ≥ 100 Å/min at temperatures ≤ 60 o C, with compatibility toward W, ILD films, and the TiN liner. The galvanic corrosion was tailored to protect the TiN liner in the presence of W. A simple yet novel patterned wafer test vehicle was developed to facilitate this work, enabling the investigation of the chemical impact at the W/TiN liner interface.

show abstract

Selective High-Throughput TiN Etching Methods

Cited by 5 publications

References 4 publications

Developing Integrated Solutions and Wet Cleans to Eliminate Tungsten Contact Attack in Sub 0x nm Nodes

Developing Integrated Solutions and Wet Cleans to Eliminate Tungsten Contact Attack in Sub 0x nm Nodes

High Throughput Wet Etch Solution for BEOL TiN Removal

TiN Metal Hard Mask Removal with Selectivity to Tungsten and TiN Liner

Contact Info

Product

Resources

About