Having successfully developed high volume manufacturing (HVM) processes for the 0x nm node, the semiconductor industry is now engaged in developing the next advanced node. This 0xnm node development is being accomplished by a combination of shrinking 0x nm dimensions, introducing new materials and films and consequently new lithography, dry etch and wet clean processes for the new node. One of the major challenges is developing processes, including BEOL Cleans Steps, to successfully and reliably expose the MOL metal contact during the first metal line formation without degrading the contact itself. One such compatible method/clean is discussed in this study.
As the technology nodes become smaller and smaller the circuit dies get closer and closer to the edge of the wafer. Defects and issues on the bevel are seen to cause issues such as flaking and blocked plating on the dies at the edge of the wafer. This drastically increases the need for a clean wafer edge as the issues directly translate to yield loss at the end of the line. The wafer edge and backside are shown to have a significant impact on yield as well as process variation [1]. Introducing a dilute HF and SC1 bevel clean at the MOL layer resolves flaking and defect issues found on the bevel. Dispensing it on the backside of the wafer and ensuring that the chemistry is rolled over to the bevel results in the backside of the wafer becoming cleaner and helps resolve overlay issues. All the above stated effects are seen to result in an overall edge gain in edge yield.
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