Selective heating of high-pressure vapour elements by ion-cyclotron resonance

Fontaine, Antoine; Louvet, Pascal; Gourrierec, P Le; Pailloux, A.

doi:10.1088/0022-3727/31/7/014

Cited by 26 publications

(8 citation statements)

References 5 publications

(20 reference statements)

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“…The plasma characteristics measured by various diagnostics [2] are introduced in the model to determine physical quantities such as the sputtering yields, the plasma electron density n eT and the mean ionization length λ i beside the target, the ionization probability U , the reflux fraction R and the quantity of metal deposited.…”

Section: Resultsmentioning

confidence: 99%

“…The plasma separation process (PSP) of isotopes is being studied [1] at Saclay on the ERIC (acronym of experiment of resonance ion cyclotron) facility [2] shown in figure 1. In this process, a plasma composed of metal and gas ions produced in a source zone drifts towards a region where an axial magnetic field B 0 directed along the axis of a plasma column is homogeneous and intense, typically 1 to 3 T (figure 2).…”

Section: Introductionmentioning

confidence: 99%

“…In this region called the separation or excitation zone, an ion cyclotron wave with a frequency matched to the cyclotron frequency of the isotope to be separated (called resonant) is launched with a half-turn inductive antenna. This water cooled antenna of 1 m length and 17 cm in diameter is described elsewhere [2]. The wave increases the transverse energy and thus the Larmor radius of the desired isotope.…”

Section: Introductionmentioning

confidence: 99%

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Study of an ECR sputtering plasma source

Fontaine

Louvet

1999

Plasma Sources Sci. Technol.

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The characteristics of a sputtering plasma source using electron cyclotron resonance, operating on the ERIC facility dedicated to isotope separation by the plasma process, are described. A simple model based upon the particle conservation equation allows us to derive the ionization probability and the reflux fraction that govern the source operating conditions, both with and without carrier gas. Other data such as sputtering yields of Ar + and Kr + ions on Ni, Cu, Pd and Gd targets as well as their self-sputtering yields have been also determined for the first time in the case of gadolinium. The axial deposit profile of metal atoms on the lateral screen of the source is in accordance with the Yamamura semi-empirical differential sputtering yield, and the ionization coefficient of GdI is deduced.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Study of an ECR sputtering plasma source

Fontaine

Louvet

1999

Plasma Sources Sci. Technol.

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“…15 It has been stated in the literature that non-contact mode is more gentle to the SFM tip and to the sample surface, making it most suitable for nanolithography. 20 However, for the formation of a water meniscus the tipsample distance must be significantly reduced compared to scanning operation. The set-point (normalized to the vacuum amplitude of the cantilever, i.e.…”

Section: Dependence On Other Parametersmentioning

confidence: 99%

Local oxidation of Ga[Al]As heterostructures with modulated tip-sample voltages

Graf

Frommenwiler

Studerus

et al. 2006

Journal of Applied Physics

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Nanolithography based on local oxidation with a scanning force microscope has been performed on an undoped GaAs wafer and a Ga[Al]As heterostructure with an undoped GaAs cap layer and a shallow two-dimensional electron gas. The oxide growth and the resulting electronic properties of the patterned structures are compared for constant and modulated voltage applied to the conductive tip of the scanning force microscope. All the lithography has been performed in non-contact mode. Modulating the applied voltage enhances the aspect ratio of the oxide lines, which significantly strengthens the insulating properties of the lines on GaAs. In addition, the oxidation process is found to be more reliable and reproducible. Using this technique, a quantum point contact and a quantum wire have been defined and the electronic stability, the confinement potential and the electrical tunability are demonstrated to be similar to the oxidation with constant voltage.

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“…To date, many different schemes have been proposed for separation systems. In particular, systems are proposed based on a curved magnetic field [5,6], combination of curved magnetic and transverse electric fields [7][8][9], ion cyclotron resonance [10][11][12][13][14][15], separation in a rotating magnetic field [16], centrifuge with thermally driven countercurrent flow [17] and so on. A complete list with a description can be found in review papers [1,2,18,19].…”

Section: Introductionmentioning

confidence: 99%

Plasma mass separation in configuration with potential well

Liziakin¹,

Антонов²,

Smirnov³

et al. 2021

J. Phys. D: Appl. Phys.

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The details of the charged particle separation by mass in the configuration with axial magnetic and radial electric fields are studied. The radial electric field, oriented to the discharge axis, is induced in a background reflex discharge with a hot cathode (−550 V, 8–14 A). The plasma source is based on a hot cathode arc discharge with independent metal vapor injection (18–21 V, 30 A) was situated at 18 cm from the axis. It was shown that the separated Ag + Pb mixture is transported across the magnetic field under the background discharge electric field. Effective separation is possible in such a system, while the separation coefficient increases from 4.9 to 6.2–8.4 when the mixture injection point is moved away from the background discharge axis from 18 to 23 cm. The effect of mixture injection on the plasma potential distribution is examined. It was shown that the presence of a plasma source of separated substances can cause a local (1–2 cm) distortion of the background plasma potential profile. Such distortion, as well as fluctuations of the background plasma potential, can significantly affect the width of the deposited spots of separated substances.

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Selective heating of high-pressure vapour elements by ion-cyclotron resonance

Cited by 26 publications

References 5 publications

Study of an ECR sputtering plasma source

Study of an ECR sputtering plasma source

Local oxidation of Ga[Al]As heterostructures with modulated tip-sample voltages

Plasma mass separation in configuration with potential well

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