Selective Growth of B- and C-Doped SiGe Layers in Unprocessed and Recessed Si Openings for p-type Metal-Oxide-Semiconductor Field-Effect Transistors Application

Abstract

This work presents the pattern dependency of the selective epitaxial growth of boron- and carbon-doped SiGe layers in recessed and unprocessed openings. The layer profile is dependent on deposition time, chip layout, and growth parameters. Carbon and boron doping compensates for the strain in SiGe layers, and when both dopants are introduced, the strain reduction is additive. The incorporation of boron and carbon in the SiGe matrix is a competitive action. The concentration of carbon decreases, whereas the boron amount increases in SiGe layers with higher Ge content. In recessed openings, the Ge content is independent of the recess depth. The strain amount in the grown layers is graded vertically, which is due to the thickness of the epilayer exceeding the critical thickness

High performance infra-red detectors based on Si/SiGe multilayers quantum structure

“…These layers are grown in meta-stable region. The strain relaxation (defect generation) occurs after a specific thickness which is called critical thickness [14]. This thickness decreases by increasing the Ge content.…”

Selective epitaxy growth of Si1−xGex layers for MOSFETs and FinFETs

“…The point with 100 % exposed Si coverage in the figure is obtained when the same growth recipe is used on a blanket substrate. The behavior of the Si deposition in contrary to the SiGe epitaxy is decreased for smaller coverage of exposed Si area [69,70]. As illustrated in the figure, growth rate rises when the exposed Si coverage increases.…”

Substrate engineering for Ni-assisted growth of carbon nano-tubes

“…These layers were used as the substrates for CNT growth to study the strain effect. The Ge contents were obtained from simulation of the high resolution X-ray diffraction (HRXRD) ω-2Â rocking curves using the Takagi-Taupin equations [13,14]. In some of the layers the strain was partially relaxed.…”

“…4d, was annealed prior to the Ni deposition to obtain relaxed substrate. The strain relaxation in these samples was observed using HRXRD rocking curves [13,14]. Fig.…”