High performance infra-red detectors based on Si/SiGe multilayers quantum structure

Kolahdouz, Mohammadreza; Östling, Mikael; Radamson, Henry H.

doi:10.1016/j.mseb.2011.10.013

Cited by 7 publications

(6 citation statements)

References 13 publications

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“…Moreover, GeSnSiC alloys are also important for future Si-based monolithic integration [ 156 ]. To further improve the device performance, quantum well structures [ 157 , 158 ] and quantum dots multilayer structures [ 159 ] are also feasible for the enhancement of SWIR detection. For the APD devices, the multiplication effect also plays a vital role in the device’s performance.…”

Section: Swir Apds Focal Plane Arrays (Fpas)mentioning

confidence: 99%

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Miao¹,

Lin²,

Li³

et al. 2023

Nanomaterials

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Among photodetectors, avalanche photodiodes (APDs) have an important place due to their excellent sensitivity to light. APDs transform photons into electrons and then multiply the electrons, leading to an amplified photocurrent. APDs are promising for faint light detection owing to this outstanding advantage, which will boost LiDAR applications. Although Si APDs have already been commercialized, their spectral region is very limited in many applications. Therefore, it is urgently demanded that the spectral region APDs be extended to the short-wavelength infrared (SWIR) region, which means better atmospheric transmission, a lower solar radiation background, a higher laser eye safety threshold, etc. Up until now, both Ge (GeSn) and InGaAs were employed as the SWIR absorbers. The aim of this review article is to provide a full understanding of Ge(GeSn) and InGaAs for PDs, with a focus on APD operation in the SWIR spectral region, which can be integrated onto the Si platform and is potentially compatible with CMOS technology.

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Section: Swir Apds Focal Plane Arrays (Fpas)mentioning

confidence: 99%

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Miao¹,

Lin²,

Li³

et al. 2023

Nanomaterials

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“…This allows classifying optical modulators in two main groups: (i) Electro-refraction modulators and (ii) Electro-absorption modulators, respectively. The most common physical effects exploited for optical modulation in photonics are Thermo-Optic (TO) [114], Pockels [115][116][117], Franz-Keldysh (FK) [118][119], Quantum confined Stark Effect (QCSE) [120][121][122][123][124][125][126][127], and Free-Carrier Plasma Dispersion effects .…”

Section: Ii2 Optical Modulationmentioning

confidence: 99%

“…There are two main EA mechanisms in silicon photonics: the Franz-Keldysh effect and the (QCSE). Both of these effects have been demonstrated in Germanium and Germanium alloys [119][120][121][122][123][124][125][126][127][128], providing a platform for siliconcompatible materials for high speed, low power, and compact modulators.…”

Section: Electro-absorption Effectsmentioning

confidence: 99%

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Building blocks of silicon photonics

Vivien

Baudot

Bœuf

et al. 2019

Future Directions in Silicon Photonics

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“…On-chip electronic devices are usually the traditional microelectronic devices, such as MOSFETs, TFETs, FinFETs, etc [ 1 , 2 , 3 , 4 ]. Moreover, photonic devices mainly include lasers [ 5 , 6 , 7 , 8 ], modulators [ 9 , 10 , 11 , 12 ], detectors [ 13 , 14 , 15 , 16 , 17 , 18 , 19 ], waveguides [ 20 , 21 , 22 , 23 ], etc. From the practical perspective, the Si-based on-chip light source was regarded as the final technical hurdle to convert the electron signal into an optical signal, which features the most striking and indispensable unit to achieve high performance Si-based OEICs [ 24 , 25 , 26 , 27 ].…”

Section: Introductionmentioning

confidence: 99%

Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon

Wang

et al. 2022

Nanomaterials

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The realization of high-performance Si-based III-V quantum-dot (QD) lasers has long attracted extensive interest in optoelectronic circuits. This manuscript presents InAs/GaAs QD lasers integrated on an advanced GaAs virtual substrate. The GaAs layer was originally grown on Ge as another virtual substrate on Si wafer. No patterned substrate or sophisticated superlattice defect-filtering layer was involved. Thanks to the improved quality of the comprehensively modified GaAs crystal with low defect density, the room temperature emission wavelength of this laser was allocated at 1320 nm, with a threshold current density of 24.4 A/cm−2 per layer and a maximum single-facet output power reaching 153 mW at 10 °C. The maximum operation temperature reaches 80 °C. This work provides a feasible and promising proposal for the integration of an efficient O-band laser with a standard Si platform in the near future.

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High performance infra-red detectors based on Si/SiGe multilayers quantum structure

Cited by 7 publications

References 13 publications

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Building blocks of silicon photonics

Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon

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