Selective germanium epitaxial growth on silicon using CVD technology with ultra-pure gases

Kobayashi, Shin; Cheng, Min Lin; Kohlhase, A.; Sato, T.; Murota, Junichi; Mikoshiba, N.

doi:10.1016/0022-0248(90)90523-n

Cited by 31 publications

(12 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This step is crucial to allow for surface reconstruction, reduce dislocation density and surface roughness. 23,25 An scanning electron microscopy ͑SEM͒ image of the sample after this step is shown in Fig. 2͑a͒.…”

Section: High Quality Single-crystal Germanium-on-insulator On Bulk Smentioning

confidence: 99%

High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing

Cheng

Park

et al. 2010

Applied Physics Letters

View full text Add to dashboard Cite

Germanium-on-insulator (GOI) is desired for high performance metal-oxide-semiconductor transistors and monolithically integrated optoelectronics. We demonstrate a promising approach to achieve single-crystal defect-free GOI by using lateral over-growth through SiO2 window. The dislocations due to the lattice mismatch are effectively terminated and reduced in SiO2 trench by selective area heteroepitaxy combined with hydrogen annealing. Low defect density of 4× 106 cm-2 and low surface roughness of 0.7 nm (root-mean-square) on GOI are confirmed by plan-view transmission electron microscopy and atomic force microscopy analysis. In addition, the excellent metal-semiconductor-metal diode electrical characteristics fabricated on this GOI confirm Ge crystal quality. The selectively grown GOI structure can provide the monolithic integration of SiGe based devices on a Si very large scale integration (VLSI) platform. © 2010 American Institute of Physics

show abstract

Section: High Quality Single-crystal Germanium-on-insulator On Bulk Smentioning

confidence: 99%

High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing

Cheng

Park

et al. 2010

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…higher temperature of 385 • C provides a higher volume of reaction sites in the chamber. The higher temperature coupled with high partial pressures of GeH 4 molecules can result in a larger number of collisions at more reaction sites that could result in the deposition of a significant amount of Ge atoms on the chamber side-walls [28,29]. This explains the dual slope observed for 385 • C in Figure 3a where the deposition rate is seen to be linear at lower partial pressures and tends to attain saturation at higher partial pressures of GeH 4 .…”

Section: Resultsmentioning

confidence: 94%

One-Step Cost-Effective Growth of High-Quality Epitaxial Ge Films on Si (100) Using a Simplified PECVD Reactor

Vanjaria

Hariharan

Arjunan

et al. 2021

Electronic Materials

View full text Add to dashboard Cite

Heteroepitaxial growth of Ge films on Si is necessary for the progress of integrated Si photonics technology. In this work, an in-house assembled plasma enhanced chemical vapor deposition reactor was used to grow high quality epitaxial Ge films on Si (100) substrates. Low economic and thermal budget were accomplished by the avoidance of ultra-high vacuum conditions or high temperature substrate pre-deposition bake for the process. Films were deposited with and without plasma assistance using germane (GeH4) precursor in a single step at process temperatures of 350–385 °C and chamber pressures of 1–10 Torr at various precursor flow rates. Film growth was realized at high ambient chamber pressures (>10−6 Torr) by utilizing a rigorous ex situ substrate cleaning process, closely controlling substrate loading times, chamber pumping and the dead-time prior to the initiation of film growth. Plasma allowed for higher film deposition rates at lower processing temperatures. An epitaxial growth was confirmed by X-Ray diffraction studies, while crystalline quality of the films was verified by X-ray rocking curve, Raman spectroscopy, transmission electron microscopy and infra-red spectroscopy.

show abstract

“…At 400 o C, the growth in the <100> direction is dominant while <311> direction facets are observed giving the film a trapezoidal shape. This is primarily due to the relatively slow growth rate along the <311> direction under these conditions, and it can be explained by surface migration (4). As the deposition time is increased, the layer forms into a pyramid-like structure.…”

Section: Resultsmentioning

confidence: 99%

Defect Reduction of Ge on Si by Selective Epitaxy and Hydrogen Annealing

Yu,

Park,

Okyay

et al. 2008

Meet. Abstr.

View full text Add to dashboard Cite

show abstract

Selective germanium epitaxial growth on silicon using CVD technology with ultra-pure gases

Cited by 31 publications

References 13 publications

High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing

High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing

One-Step Cost-Effective Growth of High-Quality Epitaxial Ge Films on Si (100) Using a Simplified PECVD Reactor

Defect Reduction of Ge on Si by Selective Epitaxy and Hydrogen Annealing

Contact Info

Product

Resources

About