Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure

Niu, Gang; Capellini, Giovanni; Hatami, Fariba; Bartolomeo, Antonio Di; Niermann, Tore; Hussein, Emad H.; Schubert, Markus Andreas; Krause, H.; Zaumseil, P.; Skibitzki, Oliver; Łupina, Grzegorz; Masselink, W. T.; Lehmann, Michael; Xie, Y. H.; Schroeder, Thomas

doi:10.1021/acsami.6b09592

Cited by 25 publications

(22 citation statements)

References 43 publications

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“…This is at the origin of the unusually high reverse saturation current observed at room temperature in dark and of the extraordinarily high photocurrent. At lower temperature, the thermal generation is suppressed and 13 so is the rate of diffusion from the MOS region into the junction area. This makes the junction reverse current much closer to the theoretical value and the photocurrent slightly lower at T = 200 K ( Figure 4 (c)).…”

Section: Discussionmentioning

confidence: 99%

Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect

et al. 2017

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We propose a hybrid device consisting of a graphene/silicon (Gr/Si) Schottky diode in parallel with a Gr/SiO2/Si capacitor for high-performance photodetection. The device, fabricated by transfer of commercial graphene on low-doped n-type Si substrate, achieves a photoresponse as high as 3 AW −1 and a normalized detectivity higher than 3.5 × 10 12 cmHz 1/2 W −1 in the visible range. The device exhibits a photocurrent exceeding the forward current, because photo-generated minority carriers, accumulated at Si/SiO2 interface of the Gr/SiO2/Si capacitor, diffuse to the Gr/Si junction. We show that the same mechanism, when due to thermally generated carriers, although usually neglected or disregarded, causes the increased leakage often measured in Gr/Si heterojunctions. At room temperature, we measure a zero-bias Schottky barrier height of 0.52 eV, as well as an effectiveRichardson constant A**=4 × 10 −5 Acm −2 K −2 and an ideality factor n ≈ 3.6, explained by a thin (< 1nm) oxide layer at the Gr/Si interface.2

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Section: Discussionmentioning

confidence: 99%

Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect

et al. 2017

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“…Graphene is a 2D structure possessing high thermal conductivity [ 1 ], high mobility and electrical conductivity [ 2 ], maximum surface to volume ratio, low contact resistance [ 3 , 4 , 5 ] and easy down-scaling [ 6 ]. All these properties make it suitable for electronics devices [ 7 ], chemical sensors, photodetectors [ 8 ] and solar cells [ 9 ]. The graphene/silicon (Gr/Si) junction is one of the simplest devices in a hybrid graphene-semiconductor technology.…”

Section: Introductionmentioning

confidence: 99%

I-V and C-V Characterization of a High-Responsivity Graphene/Silicon Photodiode with Embedded MOS Capacitor

Luongo

Giubileo²,

Genovese

et al. 2017

Nanomaterials

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We study the effect of temperature and light on the I-V and C-V characteristics of a graphene/silicon Schottky diode. The device exhibits a reverse-bias photocurrent exceeding the forward current and achieves a photoresponsivity as high as 2.5 normalA/normalW. We show that the enhanced photocurrent is due to photo-generated carriers injected in the graphene/Si junction from the parasitic graphene/SiO2/Si capacitor connected in parallel to the diode. The same mechanism can occur with thermally generated carriers, which contribute to the high leakage current often observed in graphene/Si junctions.

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“…For the top insulating layer, the metal of the filaments used for the CNT growth is mainly Ni, while Ta filaments from the Pt-Ta film are formed inside the bottom Si 3 N 4 layer. Both metals, in contact with n-Si, can form Schottky junctions [47,48,49]. Due to the different work functions (5.04–5.35 eV for Ni and 4.0–4.8 for Ta) [50], the electron Schottky barrier is higher for Ni, typically around 0.7 eV [51], and lower for Ta, usually <0.5 eV [52].…”

Section: Resultsmentioning

confidence: 99%

Bias Tunable Photocurrent in Metal-Insulator-Semiconductor Heterostructures with Photoresponse Enhanced by Carbon Nanotubes

Bartolomeo

Giubileo²,

Grillo

et al. 2019

Nanomaterials

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Metal-insulator-semiconductor-insulator-metal (MISIM) heterostructures, with rectifying current-voltage characteristics and photosensitivity in the visible and near-infrared spectra, are fabricated and studied. It is shown that the photocurrent can be enhanced by adding a multi-walled carbon nanotube film in the contact region to achieve a responsivity higher than 100 mA W−1 under incandescent light of 0.1 mW cm−2. The optoelectrical characteristics of the MISIM heterostructures are investigated at lower and higher biases and are explained by a band model based on two asymmetric back-to-back Schottky barriers. The forward current of the heterojunctions is due to majority-carrier injection over the lower barrier, while the reverse current exhibits two different conduction regimes corresponding to the diffusion of thermal/photo generated carriers and majority-carrier tunneling through the higher Schottky barrier. The two conduction regimes in reverse bias generate two plateaus, over which the photocurrent increases linearly with the light intensity that endows the detector with bias-controlled photocurrent.

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Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure

Cited by 25 publications

References 43 publications

Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect

Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect

I-V and C-V Characterization of a High-Responsivity Graphene/Silicon Photodiode with Embedded MOS Capacitor

Bias Tunable Photocurrent in Metal-Insulator-Semiconductor Heterostructures with Photoresponse Enhanced by Carbon Nanotubes

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