Selective epitaxial growth of GaAs by low-pressure MOVPE

Kamon, K.; Takagishi, Shigenori; Mori, Hideki

doi:10.1016/0022-0248(85)90332-x

Cited by 95 publications

(15 citation statements)

References 9 publications

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“…One possible explanation for the underfined growth directions is polycrystalline deposition on the SiO 2 masks, which is commonly observed [6][7][8][9] in selective area MOVPE growth. Hence, we consider that polycrystalline GaAs deposition also occurs in our experiment and competes with whisker growth.…”

Section: Site-controlled Growth Of Nanowhiskersmentioning

confidence: 99%

Site-controlled growth of nanowhiskers

Satô

Hiruma

Shirai

et al. 1995

Applied Physics Letters

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The metalogranic vapor-phase epitaxy (MOVPE) growth of site-controlled nanowhiskers having a single preferential growth direction is accomplished by using a SiO2 window mask. A small window size (200×200 nm in this experiment) is essential for growing a single whisker from a single Au- seed cluster formed inside each window of the mask. The presence of the SiO2 mask greatly influences the MOVPE growth process, especially the growth direction and resultant diameter of the whiskers. This influence may be due to surface migration of the source materials or source gas diffusion near the surface from the masked region to the window region.

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Section: Site-controlled Growth Of Nanowhiskersmentioning

confidence: 99%

Site-controlled growth of nanowhiskers

Satô

Hiruma

Shirai

et al. 1995

Applied Physics Letters

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“…While patterned epitaxy and the associated faceting have been treated in many articles, a systematic explanation based on equilibrium crystal shape ͑ECS͒ has not been reported. [1][2][3][4][5][6] The pattern scale employed in these earlier studies, which was typically micrometers or larger, means that the faceting is localized near the substrate-mask boundary. Additionally, the thickness and sidewall profile of the mask film used to provide selective epitaxy may impact lateral growth, causing interruption of faceting to ECS.…”

mentioning

confidence: 99%

“…[1][2][3][4] The ͑111͒B facets extend until the cross section becomes a triangle ͑stage 2͒. 1 As growth continues, a ͑110͒ vertical facet is generated at the end of each ͑111͒B with the initiation of lateral overgrowth ͑stage 3͒. 5 With further growth, ͑111͒A facets appear, as in Fig.…”

mentioning

confidence: 99%

Faceting of a quasi-two-dimensional GaAs crystal in nanoscale patterned growth

Lee

Huffaker

Brueck

2008

Applied Physics Letters

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The faceting of a quasi-two-dimensional nanoscale crystal (quasi-2D nanocrystal) grown by metal-organic vapor phase epitaxy is reported. Homoepitaxial selective growth is performed on a 200nm wide, [110]-directed stripe opening fabricated in a 30nm thick SiO2 film atop a GaAs(001) substrate. In the cross section perpendicular to the stripe opening, a selectively grown epilayer is regarded as a quasi-2D nanocrystal, which is close to a hexagonal shape symmetrically surrounded with (111)B-, (110)- and (111)A-type facets from the top as growth proceeds both vertically and laterally. The resulting faceting is interpreted on the basis of equilibrium crystal shape (ECS). The comparison of the observed crystal shape with theoretical modeling enables the measurement of the relative surface energies of the low index orientations. The ECS of a GaAs 2D crystal under the given growth conditions is proposed.

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“…For example, when the photons are incident with gradient b to a boundary of gradient a, as shown in Fig.1O 8r0i (12) ot= sin(n1/n2 sin Oi) Then absolute angle i, , and f is i = angle of incidence (b) Ir7I3i20i (13) 1t = angle of normal(-1/a) -Ot It is necessary to account the effect of reflected stray photons, internal absorption and the position and the shape of the light source.…”

Section: Calculated Results Of the Led Structurementioning

confidence: 99%

<title>AlGaAs/GaAs lens-shaped LED with high efficiency and narrow field pattern</title>

Cho

Kwon

1992

SPIE Proceedings

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ABSTRACFThe new LED structure suitable for high power and narrow beam pattern is proposed composed of microlens and LED layer. The microlens is fabricated by the melthack etching and regrowth technique in LPE. To control the shape of micmlens, mekbk etching and regrowth technique is studied and nearly ideal hemisphere is Obtained. The charterisücs of the proposed LED smxture is calculated based upon ray-tracing method. And the fabricated result is discussed.

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Selective epitaxial growth of GaAs by low-pressure MOVPE

Cited by 95 publications

References 9 publications

Site-controlled growth of nanowhiskers

Site-controlled growth of nanowhiskers

Faceting of a quasi-two-dimensional GaAs crystal in nanoscale patterned growth

<title>AlGaAs/GaAs lens-shaped LED with high efficiency and narrow field pattern</title>

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