Site-controlled growth of nanowhiskers

Abstract

The metalogranic vapor-phase epitaxy (MOVPE) growth of site-controlled nanowhiskers having a single preferential growth direction is accomplished by using a SiO2 window mask. A small window size (200×200 nm in this experiment) is essential for growing a single whisker from a single Au- seed cluster formed inside each window of the mask. The presence of the SiO2 mask greatly influences the MOVPE growth process, especially the growth direction and resultant diameter of the whiskers. This influence may be due to surface migration of the source materials or source gas diffusion near the surface from the masked region to the window region.

Active Packaging Coatings

“…Physical methods include flame, corona discharge, UV radiation, and plasma [5,15,17]. Wet methods involve the use of corrosive liquids to which the polymer substrates are directly exposed, like piranha solution (dissolved hydrogen peroxide and sulfuric acid), combined sodium hydroxide and sulfuric acid, chromic acid, potassium permanganate, and nitric acid [18][19][20][21][22]. The main effect of these surface activation methods is the formation of reactive oxygenated species on the polymer surface like carbonyl, hydroxyl and carboxylic acid groups [21,22].…”

Gold cluster formation using an atomic force microscope and its applications to GaAs whisker growth

“…The Au alloy droplets can be formed by the Au clusters by an annealing process. So far, such clusters have been formed by the combination of Au evaporation and masking techniques using electron-beam lithography [10]. However, this Au cluster positioning technique is restricted by the resolution of the electron-beam lithography, which is about 0.1 µm.…”

Developing 1D nanostructure arrays for future nanophotonics

“…Ohlsson et al have demonstrated site controlled placement of nanowires by manipulating the Au particles on the substrate using atomic force microscopy [69]. Sato et al [68,70] have reported the site controlled growth of GaAs whiskers on GaAs substrates by depositing Au through SiO 2 mask window formed by electron-beam lithography. When the window size increases, the number of whiskers grown inside the window increases.…”