Gold cluster formation using an atomic force microscope and its applications to GaAs whisker growth

Shirai, Masamitsu; Hiruma, Kenji; Katsuyama, T.; Koyanagi, Hajime; Hosaka, Sumio

doi:10.1006/spmi.1996.0438

Cited by 2 publications

(1 citation statement)

References 9 publications

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“…Although random massive and cheap fabrication process have been widely developed, controllable growth should receive more attention. In VLS growth, the metal cluster catalyst plays a crucial role in the position and final size of the nanowires grown on the substrates [16]. This feature of the VLS method provides a method for controlling the position and size of the nanowires by controlling the position and size of the catalyst [17].…”

Section: Introductionmentioning

confidence: 99%

Controllable Ga catalyst deposition on GaN template and fabrication of ordered vertical β-Ga₂O₃ nanowire array

Cao

Xing

et al. 2020

J. Phys. D: Appl. Phys.

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Controllable deposition of Ga droplets on a GaN template is discussed in detail in the present work. It is found that the Ga droplet density shows apparent nonlinear dependence on the flux of triethylgallium under certain annealing conditions. A simplified model based on the weakening of cluster mobility is proposed to explain the phenomenon. In addition, based on the different mobility of Ga on different substrates, a SiO2 mask with ordered nanopore array is designed and optimized for controllable catalyst deposition. By further optimizing the deposition and annealing process, a higher filling rate of nanopores is obtained, and ordered β-Ga2O3 nanowire arrays perpendicular to substrates are then achieved. The controllable uniform vertical nanowire array would further promote optimization of nanowire growth and device fabrication.

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Section: Introductionmentioning

confidence: 99%

Controllable Ga catalyst deposition on GaN template and fabrication of ordered vertical β-Ga₂O₃ nanowire array

Cao

Xing

et al. 2020

J. Phys. D: Appl. Phys.

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Growth of Au-catalyzed ordered GaAs nanowire arrays by molecular-beam epitaxy

Mei

Kim

et al. 2002

Applied Physics Letters

166

101

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Ordered gallium arsenide (GaAs) nanowires are grown by molecular-beam epitaxy on GaAs (111)B substrates using Au-catalyzed vapor–liquid–solid growth defined by nanochannel alumina (NCA) templates. Field-emission scanning electron microscope images show highly ordered nanowires with a growth direction perpendicular to the substrate. The size (i.e., diameter) distribution of the wires is drastically narrowed by depositing the gold catalyst through an NCA template mask; this narrows the size distribution of the gold dots and arranges them in a well-ordered array, as defined by the NCA template. The nanowire diameter distribution full width at half maximum on the masked substrate is 5.1 nm, compared with 15.7 nm on an unmasked substrate.

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Gold cluster formation using an atomic force microscope and its applications to GaAs whisker growth

Cited by 2 publications

References 9 publications

Controllable Ga catalyst deposition on GaN template and fabrication of ordered vertical β-Ga₂O₃ nanowire array

Controllable Ga catalyst deposition on GaN template and fabrication of ordered vertical β-Ga₂O₃ nanowire array

Growth of Au-catalyzed ordered GaAs nanowire arrays by molecular-beam epitaxy

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Gold cluster formation using an atomic force microscope and its applications to GaAs whisker growth

Cited by 2 publications

References 9 publications

Controllable Ga catalyst deposition on GaN template and fabrication of ordered vertical β-Ga2O3 nanowire array

Controllable Ga catalyst deposition on GaN template and fabrication of ordered vertical β-Ga2O3 nanowire array

Growth of Au-catalyzed ordered GaAs nanowire arrays by molecular-beam epitaxy

Contact Info

Product

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Controllable Ga catalyst deposition on GaN template and fabrication of ordered vertical β-Ga₂O₃ nanowire array

Controllable Ga catalyst deposition on GaN template and fabrication of ordered vertical β-Ga₂O₃ nanowire array