Selective Area Growth of GaN Nanowires on Graphene Nanodots

Morassi, Martina; Guan, Nan; Dubrovskiı̆, V. G.; Berdnikov, Yury; Barbier, Camille; Mancini, Lorenzo; Largeau, L.; Babichev, A. V.; Kumaresan, Vishnuvarthan; Julien, F. H.; Travers, Laurent; Gogneau, N.; Harmand, Jean-Christophe; Tchernycheva, Maria

doi:10.1021/acs.cgd.9b00556

Cited by 24 publications

(19 citation statements)

References 58 publications

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“…Graphene is emerging as an alternative substrate for the SAG of GaN NWs. Recently, Morassi et al [ 49 ] developed a new approach for the Selective area, growth of vertically aligned GaN NWs on Graphene Nanodots by MBE. NWs growth was achieved on the dots of different sizes 50, 100, 150, and 200 nm.…”

Section: Van Der Waals Epitaxy Growth Of Semiconductor Nanowires On Gmentioning

confidence: 99%

Recent advances in the Van der Waals epitaxy growth of III‐V semiconductor nanowires on graphene

Anyebe

Kesaria

2020

Nano Select

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The recent discovery of the one‐atom‐thick, two‐dimensional graphene layers with exciting properties including superb optical transparency and high mechanical robustness has stimulated extensive research interest for use as an alternative nanowires (NWs) growth platform for applications in next generation, flexible, stretchable, and printable electronic and optoelectronic devices. When combined with the exceptional capabilities of semiconductor NWs including improved light absorption, reduced optical reflectance, enhanced carrier collection, and fast response, the performance of optoelectronic devices could be significantly improved in novel high‐performance, flexible nanodevices. However, the growth of semiconductor NWs on 2D graphene layers is highly challenging owing to the absence of surface dangling bonds on graphene. Intriguingly, the last decade has witnessed a flurry of research activity on the growth of III‐V semiconductor NWs on graphene. In this review, we highlight the significant advancements that have been made in circumventing this challenge to realize the growth of III‐V semiconductor NWs on graphene. We then summarize the recent progress made in the development of graphene‐based NWs devices including photodetectors and solar cells. Finally, a brief conclusion and outlook of the way forward in the growth of semiconductor NWs on graphene is presented.

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Section: Van Der Waals Epitaxy Growth Of Semiconductor Nanowires On Gmentioning

confidence: 99%

Recent advances in the Van der Waals epitaxy growth of III‐V semiconductor nanowires on graphene

Anyebe

Kesaria

2020

Nano Select

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“…Another consequence of increasing T G is an increased NR incubation time [17,52]. Prior to vertical growth, SAG NRs follow several incubation steps, namely the formation of a wetting layer, formation of 3D nuclei, and the coalescence of GaN islands [14].…”

Section: Effects Of Ga Adatom Incorporation On Nanorod Growthmentioning

confidence: 99%

High-Selectivity Growth of GaN Nanorod Arrays by Liquid-Target Magnetron Sputter Epitaxy

et al. 2020

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Selective-area grown, catalyst-free GaN nanorod (NR) arrays grown on Si substrates have been realized using liquid-target reactive magnetron sputter epitaxy (MSE). Focused ion beam lithography (FIBL) was applied to pattern Si substrates with TiNx masks. A liquid Ga target was sputtered in a mixture gas of Ar and N2, ranging the N2 partial pressure (PN₂) ratio from 100% to 50%. The growth of NRs shows a strong correlation with PN₂ on the selectivity, coalescence, and growth rate of NRs in both radial and axial directions. The growth rate of NRs formed inside the nanoholes increases monotonically with PN₂. The PN₂ ratio between 80% and 90% was found to render both a high growth rate and high selectivity. When the PN₂ ratio was below 80%, multiple NRs were formed in the nanoholes. For a PN₂ ratio higher than 90%, parasitic NRs were grown on the mask. An observed dependence of growth behavior upon the PN₂ ratio is attributed to a change in the effective Ga/N ratio on the substrate surface, as an effect of impinging reactive species, surface diffusivity, and residence time of adatoms. The mechanism of NR growth control was further investigated by studying the effect of nanoholes array pitch and growth temperature. The surface diffusion and the direct impingement of adatoms were found to be the dominant factors affecting the lateral and axial growth rates of NR, respectively, which were well elucidated by the collection area model.

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“…После формирования меток совмещения осуществлялся перенос монослойного графена, полученного методом химического осаждения из газовой фазы (метод CVD) через жидкость [43][44][45][46][47][48]. Перенос графена с исходной поверхности медной фольги осуществлялся за счет жидкостного травления меди в растворе персульфата аммония с предварительным нанесением слоя полиметилметакрилата (PMMA) на поверхность графена [49][50][51][52] Для измерения спектров отражения на макромасштабе использована установка измерения фотолюминесценции и оптического отражения Accent RPM Sigma.…”

Section: экспериментunclassified

Исследование Фотоотклика Графена, Полученного Методом Химического Осаждения Из Газовой Фазы

Бабичев¹,

Кадинская²,

Шубина³

et al. 2020

Физика И Техника Полупроводников

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The paper presents the results of experiments in the fabrication and research of properties of photodetector structures on the basis of monolayer graphene produced by chemical vapor deposition. The base structure was the geometry of a Ta2O5 vertical microcavity with a lower dielectric SiO2/Ta2O5 distributed Bragg reflector with a resonance wavelength of about 850 nm. The conditions were optimized for the transfer and fabrication of mesas in the graphene layer on the microcavity surface. The diagnostics of the structural quality of graphene after the fabrication of mesas in the graphene layer and contact pads by Raman spectroscopy evidence the monolayer structure of graphene with a low singularity strength in its spectrum that is responsible for the structure imperfection. The photocurrent value at local optical pumping was measured.

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Selective Area Growth of GaN Nanowires on Graphene Nanodots

Cited by 24 publications

References 58 publications

Recent advances in the Van der Waals epitaxy growth of III‐V semiconductor nanowires on graphene

Recent advances in the Van der Waals epitaxy growth of III‐V semiconductor nanowires on graphene

High-Selectivity Growth of GaN Nanorod Arrays by Liquid-Target Magnetron Sputter Epitaxy

Исследование Фотоотклика Графена, Полученного Методом Химического Осаждения Из Газовой Фазы

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